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Reliable power gating with NBTI aging benefits

Reliable power gating with NBTI aging benefits
Reliable power gating with NBTI aging benefits
In this paper, we show that Negative Bias Temperature Instability (NBTI) aging of sleep transistors (STs), together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for power gated circuits. Indeed, it reduces static power due to leakage current, and increases ST switch efficiency, making power gating more efficient and effective over time. The magnitude of these aging benefits depends on operating and environmental conditions. By means of HSPICE simulations, considering a 32nm CMOS technology, we demonstrate that static power may reduce by more than 80% in 10 years of operation. Static power decrease over time due to NBTI aging is also proven experimentally, using a test-chip manufactured with a TSMC 65nm technology. We propose an ST design strategy for reliable power gating, in order to harvest the benefits offered by NBTI aging. It relies on the design of STs with a proper lower Vth compared to the standard power switching fabric. This can be achieved by either re-designing the STs with the identified Vth value, or applying a proper forward body bias to the available power switching fabrics. Through HSPICE simulations, we show lifetime extension up to 21.4X and average static power reduction up to 16.3% compared to standard ST design approach, without additional area overhead. Finally, we show lifetime extension and several performance-cost trade-offs when a target maximum lifetime is considered.
1063-8210
2735 - 2744
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Tenentes, Vasileios
1bff9ebc-9186-438b-850e-6c738994fa39
Yang, Sheng
04b9848f-ddd4-4d8f-93b6-b91a2144d49c
Khursheed, Saqib
0c4e3d52-0df5-43d9-bafe-d2eaea457506
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Rossi, Daniele
30c42382-cf0a-447d-8695-fa229b7b8a2f
Tenentes, Vasileios
1bff9ebc-9186-438b-850e-6c738994fa39
Yang, Sheng
04b9848f-ddd4-4d8f-93b6-b91a2144d49c
Khursheed, Saqib
0c4e3d52-0df5-43d9-bafe-d2eaea457506
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d

Rossi, Daniele, Tenentes, Vasileios, Yang, Sheng, Khursheed, Saqib and Al-Hashimi, Bashir (2016) Reliable power gating with NBTI aging benefits. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 24 (8), 2735 - 2744. (doi:10.1109/TVLSI.2016.2519385).

Record type: Article

Abstract

In this paper, we show that Negative Bias Temperature Instability (NBTI) aging of sleep transistors (STs), together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for power gated circuits. Indeed, it reduces static power due to leakage current, and increases ST switch efficiency, making power gating more efficient and effective over time. The magnitude of these aging benefits depends on operating and environmental conditions. By means of HSPICE simulations, considering a 32nm CMOS technology, we demonstrate that static power may reduce by more than 80% in 10 years of operation. Static power decrease over time due to NBTI aging is also proven experimentally, using a test-chip manufactured with a TSMC 65nm technology. We propose an ST design strategy for reliable power gating, in order to harvest the benefits offered by NBTI aging. It relies on the design of STs with a proper lower Vth compared to the standard power switching fabric. This can be achieved by either re-designing the STs with the identified Vth value, or applying a proper forward body bias to the available power switching fabrics. Through HSPICE simulations, we show lifetime extension up to 21.4X and average static power reduction up to 16.3% compared to standard ST design approach, without additional area overhead. Finally, we show lifetime extension and several performance-cost trade-offs when a target maximum lifetime is considered.

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Accepted/In Press date: 28 December 2015
e-pub ahead of print date: 15 February 2016
Published date: August 2016
Organisations: Electronic & Software Systems

Identifiers

Local EPrints ID: 386816
URI: http://eprints.soton.ac.uk/id/eprint/386816
ISSN: 1063-8210
PURE UUID: 8720d42f-7087-45ac-96d6-ffe4ced04ebf

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Date deposited: 04 Feb 2016 14:59
Last modified: 16 Dec 2019 20:07

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Contributors

Author: Daniele Rossi
Author: Vasileios Tenentes
Author: Sheng Yang
Author: Saqib Khursheed
Author: Bashir Al-Hashimi

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