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Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications

Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications
Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications
In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent transistor characteristics. The pH sensitivity using a liquid gate was found to be 46.5 mV/pH, while the pH sensitivity using a bottom gate showed a sensitivity of 366 mV/pH, which is attributed to the capacitance coupling between the top- and bottom-gates. The maximum process temperature used in the fabrication of the nanowire sensors is optimized to be 200°C (after wet oxidation) which makes it applicable to low-cost substrates such as glass and plastic. The Ion Beam Etching (IBE) process in this work is shown to be highly transferable and can therefore be directly used to form nanowires of different materials, such as polysilicon and molybdenum disulfide, by only an adjustment of the etch time.
0167-9317
96-100
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Zeimpekis, I.
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Hu, C.
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Ditshego, N.M.J.
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Thomas, O.
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de Planque, M.R.R.
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Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Sun, K.
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Hu, C.
4892b566-6809-42a8-8285-1c1e93aac730
Ditshego, N.M.J.
4f543bd6-5bdd-4618-82e1-f6830bada12c
Thomas, O.
f9816700-63de-4cbf-a4dd-939ff7607fb5
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Morgan, H.
de00d59f-a5a2-48c4-a99a-1d5dd7854174
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Sun, K., Zeimpekis, I., Hu, C., Ditshego, N.M.J., Thomas, O., de Planque, M.R.R., Chong, H.M.H., Morgan, H. and Ashburn, P. (2016) Low-cost top-down zinc oxide nanowire sensors through a highly transferable ion beam etching for healthcare applications. Microelectronic Engineering, 153, 96-100. (doi:10.1016/j.mee.2016.02.016).

Record type: Article

Abstract

In this work, we demonstrate a wafer-level zinc oxide (ZnO) nanowire fabrication process using ion beam etching and a spacer etch technique. The proposed process can accurately define nanowires without an advanced photolithography and provide a high yield over a 6-inch wafer. The fabricated nanowires are 36 nm wide and 86 nm thick and present excellent transistor characteristics. The pH sensitivity using a liquid gate was found to be 46.5 mV/pH, while the pH sensitivity using a bottom gate showed a sensitivity of 366 mV/pH, which is attributed to the capacitance coupling between the top- and bottom-gates. The maximum process temperature used in the fabrication of the nanowire sensors is optimized to be 200°C (after wet oxidation) which makes it applicable to low-cost substrates such as glass and plastic. The Ion Beam Etching (IBE) process in this work is shown to be highly transferable and can therefore be directly used to form nanowires of different materials, such as polysilicon and molybdenum disulfide, by only an adjustment of the etch time.

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Accepted/In Press date: 10 February 2016
e-pub ahead of print date: 18 February 2016
Published date: 5 March 2016
Venue - Dates: Micro and nano engineering 2016, Vienna, Vienna, Austria, 2016-09-19 - 2016-09-23
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 387989
URI: http://eprints.soton.ac.uk/id/eprint/387989
ISSN: 0167-9317
PURE UUID: 44f85139-bdc7-4cd5-9f77-4e4224b238b1
ORCID for I. Zeimpekis: ORCID iD orcid.org/0000-0002-7455-1599
ORCID for M.R.R. de Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761
ORCID for H. Morgan: ORCID iD orcid.org/0000-0003-4850-5676

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Date deposited: 17 Feb 2016 10:43
Last modified: 15 Mar 2024 03:38

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Contributors

Author: K. Sun
Author: I. Zeimpekis ORCID iD
Author: C. Hu
Author: N.M.J. Ditshego
Author: O. Thomas
Author: M.R.R. de Planque ORCID iD
Author: H.M.H. Chong ORCID iD
Author: H. Morgan ORCID iD
Author: P. Ashburn

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