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Near- and mid- infrared group IV photonics

Near- and mid- infrared group IV photonics
Near- and mid- infrared group IV photonics
Silicon photonics is seen by many to be the solution to the capacity crunch faced by the communications industry. Global sales of silicon photonics products are predicted to be reach US$1 billion by 2020 [1]. The key factors in the predicted success of this technology are integration, and the ability to mass produce products at a low cost, due to its compatibility with CMOS electronics technology. Silicon photonics circuits typically operate at a wavelength of 1.55 µm due to the low loss of optical fibres at this wavelength. To this end, this presentation discusses a novel method of growing single crystal, tuneable composition silicon-germanium-on-insulator by rapid melt growth, with the aim of fabricating extremely low power electro-absorption modulators at a range of wavelengths close to 1.55 µm, enabling dramatic expansion of datalink capacity through the use of wavelength division multiplexing (WDM) [2]. The range of localised uniform composition SiGe layers are formed using only a single growth and single anneal step, as shown in Fig.1.

Additionally, the extension of silicon photonics into the mid-infrared wavelengths (2 µm and beyond) is discussed. Some basic passive components required for optical circuits are demonstrated, including multi-mode interferometers (MMI), as shown in Fig. 2. Furthermore, the feasibility of fabricating active devices in a Ge-on-Si platform is discussed [3].
Littlejohns, Callum
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Mohamed, Said Rouifed
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Qiu, Haodong
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Guo Xin, Tina
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Hu, Ting
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Domínguez Bucio, Thalía
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Nedeljković, Milos
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Mashanovich, Goran
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Reed, Graham
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Gardes, Frederic
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Wang, Hong
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Littlejohns, Callum
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Mohamed, Said Rouifed
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Qiu, Haodong
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Guo Xin, Tina
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Hu, Ting
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Domínguez Bucio, Thalía
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Nedeljković, Milos
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Mashanovich, Goran
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Reed, Graham
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Gardes, Frederic
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Wang, Hong
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Littlejohns, Callum, Mohamed, Said Rouifed, Qiu, Haodong, Guo Xin, Tina, Hu, Ting, Domínguez Bucio, Thalía, Nedeljković, Milos, Mashanovich, Goran, Reed, Graham, Gardes, Frederic and Wang, Hong (2016) Near- and mid- infrared group IV photonics. Energy Materials and Nanotechnology Quantum Meeting, Phuket, Thailand. 08 - 11 Apr 2016. 1 pp .

Record type: Conference or Workshop Item (Other)

Abstract

Silicon photonics is seen by many to be the solution to the capacity crunch faced by the communications industry. Global sales of silicon photonics products are predicted to be reach US$1 billion by 2020 [1]. The key factors in the predicted success of this technology are integration, and the ability to mass produce products at a low cost, due to its compatibility with CMOS electronics technology. Silicon photonics circuits typically operate at a wavelength of 1.55 µm due to the low loss of optical fibres at this wavelength. To this end, this presentation discusses a novel method of growing single crystal, tuneable composition silicon-germanium-on-insulator by rapid melt growth, with the aim of fabricating extremely low power electro-absorption modulators at a range of wavelengths close to 1.55 µm, enabling dramatic expansion of datalink capacity through the use of wavelength division multiplexing (WDM) [2]. The range of localised uniform composition SiGe layers are formed using only a single growth and single anneal step, as shown in Fig.1.

Additionally, the extension of silicon photonics into the mid-infrared wavelengths (2 µm and beyond) is discussed. Some basic passive components required for optical circuits are demonstrated, including multi-mode interferometers (MMI), as shown in Fig. 2. Furthermore, the feasibility of fabricating active devices in a Ge-on-Si platform is discussed [3].

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e-pub ahead of print date: 9 April 2016
Venue - Dates: Energy Materials and Nanotechnology Quantum Meeting, Phuket, Thailand, 2016-04-08 - 2016-04-11
Organisations: Optoelectronics Research Centre

Identifiers

Local EPrints ID: 392891
URI: https://eprints.soton.ac.uk/id/eprint/392891
PURE UUID: e6209be2-a1cd-4418-95f1-a524933cb265
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403
ORCID for Milos Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

Catalogue record

Date deposited: 20 Apr 2016 13:30
Last modified: 17 May 2019 00:30

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Contributors

Author: Callum Littlejohns
Author: Said Rouifed Mohamed
Author: Haodong Qiu
Author: Tina Guo Xin
Author: Ting Hu
Author: Milos Nedeljković ORCID iD
Author: Graham Reed
Author: Frederic Gardes
Author: Hong Wang

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