An FPGA-based instrument for en-masse RRAM characterization with ns pulsing resolution
An FPGA-based instrument for en-masse RRAM characterization with ns pulsing resolution
An FPGA-based instrument with capabilities of on-board oscilloscope and nanoscale pulsing (70 ns @ \pm 10 V) is presented, thus allowing exploration of the nano-scale switching of RRAM devices. The system possesses less than 1% read-out error for resistance range between 1 text{k}\Omega to 1 text{M}\Omega , and demonstrated its functionality on characterizing solid-state prototype RRAM devices on wafer; devices exhibiting gradual switching behavior under pulsing with duration spanning between 30 ns to 100 \µs. The data conversion error-induced degradation on read-out accuracy is studied extensively and verified by standard linear resistor measurements. The integrated oscilloscope capability extends the versatility of our instrument, rendering a powerful tool for processing development of emerging memory technologies but also for testing theoretical hypotheses arising in the new field of memristors.
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Xing, Jinling
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Serb, Alexander
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Khiat, Ali
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Berdan, Radu
e259cd5a-6e30-4439-94c0-9c44903e1e75
Xu, Hui
552bd821-498f-49c0-b384-053c0da90b58
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Xing, Jinling
c504f7e4-75f7-4dcc-8aae-cacaa91dc90d
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Berdan, Radu
e259cd5a-6e30-4439-94c0-9c44903e1e75
Xu, Hui
552bd821-498f-49c0-b384-053c0da90b58
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Xing, Jinling, Serb, Alexander, Khiat, Ali, Berdan, Radu, Xu, Hui and Prodromakis, Themis
(2016)
An FPGA-based instrument for en-masse RRAM characterization with ns pulsing resolution.
IEEE Transactions on Circuits and Systems I: Regular Papers, .
(doi:10.1109/TCSI.2016.2538039).
Abstract
An FPGA-based instrument with capabilities of on-board oscilloscope and nanoscale pulsing (70 ns @ \pm 10 V) is presented, thus allowing exploration of the nano-scale switching of RRAM devices. The system possesses less than 1% read-out error for resistance range between 1 text{k}\Omega to 1 text{M}\Omega , and demonstrated its functionality on characterizing solid-state prototype RRAM devices on wafer; devices exhibiting gradual switching behavior under pulsing with duration spanning between 30 ns to 100 \µs. The data conversion error-induced degradation on read-out accuracy is studied extensively and verified by standard linear resistor measurements. The integrated oscilloscope capability extends the versatility of our instrument, rendering a powerful tool for processing development of emerging memory technologies but also for testing theoretical hypotheses arising in the new field of memristors.
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Accepted/In Press date: 8 February 2016
e-pub ahead of print date: 18 May 2016
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 397927
URI: http://eprints.soton.ac.uk/id/eprint/397927
ISSN: 1549-8328
PURE UUID: 4891c680-b44a-4a10-9ed3-a9dec0b27d0d
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Date deposited: 12 Jul 2016 09:15
Last modified: 15 Mar 2024 01:25
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Contributors
Author:
Jinling Xing
Author:
Alexander Serb
Author:
Ali Khiat
Author:
Radu Berdan
Author:
Hui Xu
Author:
Themis Prodromakis
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