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A MEMS thermal shear stress sensor produced by a combination of substrate-free structures with anodic bonding technology

A MEMS thermal shear stress sensor produced by a combination of substrate-free structures with anodic bonding technology
A MEMS thermal shear stress sensor produced by a combination of substrate-free structures with anodic bonding technology
By combining substrate-free structures with anodic bonding technology, we present a simple and efficient micro-electro-mechanical system (MEMS) thermal shear stress sensor. Significantly, the resulting depth of the vacuum cavity of the sensor is determined by the thickness of the silicon substrate at which Si is removed by the anisotropic wet etching process. Compared with the sensor based on a sacrificial layer technique, the proposed MEMS thermal shear-stress sensor exhibits dramatically improved sensitivity due to the much larger vacuum cavity depth. The fabricated MEMS thermal shear-stress sensor with a vacuum cavity depth as large as 525 μm and a vacuum of 5x10-2 Pa exhibits a sensitivity of 184.5mV/Pa and a response time of 180 μs. We also experimentally demonstrate that the sensor power is indeed proportional to the 1/3-power of the applied shear stress. The substrate-free structures offer the ability to precisely measure the shear stress fluctuations in low speed turbulent boundary layer wind tunnels.
0003-6951
1-5
Ou, Yi
04fde992-3109-498c-b593-9486ca80512a
Qu, Furong
b14ca561-914a-4cea-a262-17e91329c850
Wang, Guanya
74103ae5-1ccf-46eb-b4cb-6647cddaafe9
Nie, Mengyan
a8613738-d74a-40fb-8881-08069fb0a34b
Li, Zhigang
096004a8-6630-4fdb-8d0f-c51239ebc80a
Ou, Wen
b61bc953-73ef-4e90-a333-185101a3eba4
Xie, Changqing
e46346b9-56b3-44cb-9533-0a67428a9e4a
Ou, Yi
04fde992-3109-498c-b593-9486ca80512a
Qu, Furong
b14ca561-914a-4cea-a262-17e91329c850
Wang, Guanya
74103ae5-1ccf-46eb-b4cb-6647cddaafe9
Nie, Mengyan
a8613738-d74a-40fb-8881-08069fb0a34b
Li, Zhigang
096004a8-6630-4fdb-8d0f-c51239ebc80a
Ou, Wen
b61bc953-73ef-4e90-a333-185101a3eba4
Xie, Changqing
e46346b9-56b3-44cb-9533-0a67428a9e4a

Ou, Yi, Qu, Furong, Wang, Guanya, Nie, Mengyan, Li, Zhigang, Ou, Wen and Xie, Changqing (2016) A MEMS thermal shear stress sensor produced by a combination of substrate-free structures with anodic bonding technology. Applied Physics Letters, 109 (2), 1-5. (doi:10.1063/1.4958842).

Record type: Article

Abstract

By combining substrate-free structures with anodic bonding technology, we present a simple and efficient micro-electro-mechanical system (MEMS) thermal shear stress sensor. Significantly, the resulting depth of the vacuum cavity of the sensor is determined by the thickness of the silicon substrate at which Si is removed by the anisotropic wet etching process. Compared with the sensor based on a sacrificial layer technique, the proposed MEMS thermal shear-stress sensor exhibits dramatically improved sensitivity due to the much larger vacuum cavity depth. The fabricated MEMS thermal shear-stress sensor with a vacuum cavity depth as large as 525 μm and a vacuum of 5x10-2 Pa exhibits a sensitivity of 184.5mV/Pa and a response time of 180 μs. We also experimentally demonstrate that the sensor power is indeed proportional to the 1/3-power of the applied shear stress. The substrate-free structures offer the ability to precisely measure the shear stress fluctuations in low speed turbulent boundary layer wind tunnels.

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Submitted date: 12 April 2016
Accepted/In Press date: 3 July 2016
e-pub ahead of print date: 13 July 2016
Organisations: nCATS Group

Identifiers

Local EPrints ID: 398003
URI: http://eprints.soton.ac.uk/id/eprint/398003
ISSN: 0003-6951
PURE UUID: 3c0d8460-2774-4348-9d86-c4d605c92daf
ORCID for Mengyan Nie: ORCID iD orcid.org/0000-0002-7758-760X

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Date deposited: 14 Jul 2016 09:00
Last modified: 17 Dec 2019 01:44

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Contributors

Author: Yi Ou
Author: Furong Qu
Author: Guanya Wang
Author: Mengyan Nie ORCID iD
Author: Zhigang Li
Author: Wen Ou
Author: Changqing Xie

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