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Three-dimensional Finite Elements method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs

Three-dimensional Finite Elements method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs
Three-dimensional Finite Elements method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs
Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD is presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the Intel 22 nm bulk technology. Irradiation simulations of the transistor performed with all terminals unbiased reveal increased hardness up to a total dose of 1 MRad(SiO2).
0168-583X
1-5
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Potter, Kenneth
dbd5061f-49e8-4fad-8c58-31357b84e3fe
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Chatzikyriakou, Eleni, Potter, Kenneth, Redman-White, William and de Groot, Kees (2016) Three-dimensional Finite Elements method simulation of Total Ionizing Dose in 22 nm bulk nFinFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1-5. (doi:10.1016/j.nimb.2016.09.007).

Record type: Article

Abstract

Finite Elements Method simulation of Total Ionizing Dose effects on 22 nm bulk Fin Field Effect Transistor (FinFET) devices using the commercial software Synopsys Sentaurus TCAD is presented. The simulation parameters are extracted by calibrating the charge trapping model to experimental results on 400 nm SiO2 capacitors irradiated under zero bias. The FinFET device characteristics are calibrated to the Intel 22 nm bulk technology. Irradiation simulations of the transistor performed with all terminals unbiased reveal increased hardness up to a total dose of 1 MRad(SiO2).

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Accepted/In Press date: 6 September 2016
e-pub ahead of print date: 23 September 2016
Organisations: Electronics & Computer Science

Identifiers

Local EPrints ID: 400501
URI: https://eprints.soton.ac.uk/id/eprint/400501
ISSN: 0168-583X
PURE UUID: 23a310d4-dac0-4221-8749-bb3e4257cc90
ORCID for Eleni Chatzikyriakou: ORCID iD orcid.org/0000-0002-5624-3701
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 23 Nov 2016 10:27
Last modified: 12 Nov 2019 01:51

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