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Transport properties in silicon nanowire transistors with atomically flat interfaces

Transport properties in silicon nanowire transistors with atomically flat interfaces
Transport properties in silicon nanowire transistors with atomically flat interfaces
1-2
Liu, F.
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Husain, M.K.
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Li, Z.
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Sotto, M.S.H.
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Burt, D.
49c801a2-fb48-40f2-b72f-f713151b96e6
Fletcher, J.D.
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Kataoka, M.
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Tsuchiya, Y.
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Saito, S.
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Liu, F.
beec7ff8-5835-4793-981b-fafd99b52549
Husain, M.K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Z.
05f14f5e-fc6e-446e-ac52-64be640b5e42
Sotto, M.S.H.
2e7797fc-4433-4513-bd08-03ab7839452c
Burt, D.
49c801a2-fb48-40f2-b72f-f713151b96e6
Fletcher, J.D.
ff3dc15e-4623-47e8-b20b-305edb5e98ae
Kataoka, M.
a29bcc0f-ab52-4812-b81f-994bb04c9ad7
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Liu, F., Husain, M.K., Li, Z., Sotto, M.S.H., Burt, D., Fletcher, J.D., Kataoka, M., Tsuchiya, Y. and Saito, S. (2017) Transport properties in silicon nanowire transistors with atomically flat interfaces. 2017 1st Electron Devices Technology and Manufacturing Conference (EDTM2017), Toyama, Japan. 28 Feb - 02 Mar 2017. pp. 1-2 . (doi:10.1109/EDTM.2017.7947561).

Record type: Conference or Workshop Item (Paper)
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Submitted date: 5 November 2016
e-pub ahead of print date: 15 June 2017
Venue - Dates: 2017 1st Electron Devices Technology and Manufacturing Conference (EDTM2017), Toyama, Japan, 2017-02-28 - 2017-03-02
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 402316
URI: http://eprints.soton.ac.uk/id/eprint/402316
PURE UUID: 09431778-ccca-475e-8cff-a844f83624cf
ORCID for F. Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for S. Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 28 Nov 2016 13:54
Last modified: 07 Oct 2020 03:36

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