Liu, F., Husain, M.K., Li, Z., Sotto, M.S.H., Burt, D., Fletcher, J.D., Kataoka, M., Tsuchiya, Y. and Saito, S. (2017) Transport properties in silicon nanowire transistors with atomically flat interfaces. 2017 1st Electron Devices Technology and Manufacturing Conference (EDTM2017), Toyama, Japan. 28 Feb - 02 Mar 2017. pp. 1-2 . (doi:10.1109/EDTM.2017.7947561).
Record type:
Conference or Workshop Item
(Paper)
More information
Submitted date: 5 November 2016
e-pub ahead of print date: 15 June 2017
Venue - Dates:
2017 1st Electron Devices Technology and Manufacturing Conference (EDTM2017), Toyama, Japan, 2017-02-28 - 2017-03-02
Related URLs:
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 402316
URI: http://eprints.soton.ac.uk/id/eprint/402316
PURE UUID: 09431778-ccca-475e-8cff-a844f83624cf
Catalogue record
Date deposited: 28 Nov 2016 13:54
Last modified: 15 Mar 2024 03:43
Export record
Altmetrics
Contributors
Author:
F. Liu
Author:
M.K. Husain
Author:
Z. Li
Author:
M.S.H. Sotto
Author:
D. Burt
Author:
J.D. Fletcher
Author:
M. Kataoka
Author:
Y. Tsuchiya
Author:
S. Saito
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.