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Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node

Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node
Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node
Total Ionizing Dose and Random Dopant Fluctuation simulations in 45 nm Partially Depleted Silicon-on-Insulator nMOSFETs are presented. Calibration is done according to the commercial IBM 45 nm technology node. The importance of the bottom corner parasitic transistor to the Total Ionizing Dose response is shown with the use of ultra shallow junctions. Simulation of irradiation in two-dimensional slices of the device reveal that the majority of the charge is trapped around the silicon film and at the bottom of the Buried OXide in the case of a positive gate bias. Random Dopant Fluctuations are examined using the Sano and the Impedance Field Method. The simulation results of the two methods are in good agreement. Dopant fluctuations do not produce significant response variation pre-irradiation, but they affect post-irradiation results introducing statistical deviations and aggravating Total Ionizing Dose effects. This effect is more pronounced during weak inversion of the parasitic transistor.
0026-2714
21-29
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Redman-White, William
d5376167-c925-460f-8e9c-13bffda8e0bf
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Chatzikyriakou, Eleni, Redman-White, William and de Groot, Kees (2017) Total Ionizing Dose, Random Dopant Fluctuations and its combined effect in the 45 nm PDSOI node. Microelectronics Reliability, 68, 21-29. (doi:10.1016/j.microrel.2016.11.007).

Record type: Article

Abstract

Total Ionizing Dose and Random Dopant Fluctuation simulations in 45 nm Partially Depleted Silicon-on-Insulator nMOSFETs are presented. Calibration is done according to the commercial IBM 45 nm technology node. The importance of the bottom corner parasitic transistor to the Total Ionizing Dose response is shown with the use of ultra shallow junctions. Simulation of irradiation in two-dimensional slices of the device reveal that the majority of the charge is trapped around the silicon film and at the bottom of the Buried OXide in the case of a positive gate bias. Random Dopant Fluctuations are examined using the Sano and the Impedance Field Method. The simulation results of the two methods are in good agreement. Dopant fluctuations do not produce significant response variation pre-irradiation, but they affect post-irradiation results introducing statistical deviations and aggravating Total Ionizing Dose effects. This effect is more pronounced during weak inversion of the parasitic transistor.

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More information

Accepted/In Press date: 14 November 2016
e-pub ahead of print date: 23 November 2016
Published date: January 2017
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 403078
URI: https://eprints.soton.ac.uk/id/eprint/403078
ISSN: 0026-2714
PURE UUID: b546d0fb-eb39-4610-a1e9-6751209f33c3
ORCID for Eleni Chatzikyriakou: ORCID iD orcid.org/0000-0002-5624-3701
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 23 Nov 2016 10:30
Last modified: 19 Nov 2019 06:30

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