Amorphous SiC resistive memory with embedded Cu nanoparticles
Amorphous SiC resistive memory with embedded Cu nanoparticles
Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/a-SiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu. Reduced forming and SET voltages and increased endurance was observed for devices with 30Cu%. At the same time, all key advantageous characteristics of amorphous SiC resistive memory such as ON/OFF ratio of 107 and the co-existence of bipolar and unipolar modes were maintained upon Cu embedding. All above suggests that Cu embedding could be considered as a promising method to improve the overall performance of Cu/a-SiC:Cu/Au resistive memories.
1-5
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Wang, Shuncai
8a390e2d-6552-4c7c-a88f-25bf9d6986a6
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
25 April 2017
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Wang, Shuncai
8a390e2d-6552-4c7c-a88f-25bf9d6986a6
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Fan, Junqing, Jiang, Liudi, Wang, Shuncai, Huang, Ruomeng, Morgan, Katrina, Zhong, Le and de Groot, Kees
(2017)
Amorphous SiC resistive memory with embedded Cu nanoparticles.
[in special issue: Micro/Nano Devices and Systems Edited by Bernhard Jakoby and Roman Beigelbeck]
Microelectronic Engineering, 174, .
(doi:10.1016/j.mee.2016.12.005).
Abstract
Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/a-SiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu. Reduced forming and SET voltages and increased endurance was observed for devices with 30Cu%. At the same time, all key advantageous characteristics of amorphous SiC resistive memory such as ON/OFF ratio of 107 and the co-existence of bipolar and unipolar modes were maintained upon Cu embedding. All above suggests that Cu embedding could be considered as a promising method to improve the overall performance of Cu/a-SiC:Cu/Au resistive memories.
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Accepted manuscript.pdf
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More information
Accepted/In Press date: 8 December 2016
e-pub ahead of print date: 10 December 2016
Published date: 25 April 2017
Organisations:
Engineering Mats & Surface Engineerg Gp, Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Engineering Sciences
Identifiers
Local EPrints ID: 404055
URI: http://eprints.soton.ac.uk/id/eprint/404055
ISSN: 0167-9317
PURE UUID: a07705c4-6f58-4ca9-845e-30a849f593b0
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Date deposited: 20 Dec 2016 10:16
Last modified: 16 Mar 2024 04:10
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Contributors
Author:
Junqing Fan
Author:
Ruomeng Huang
Author:
Katrina Morgan
Author:
Le Zhong
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