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Amorphous SiC resistive memory with embedded Cu nanoparticles

Amorphous SiC resistive memory with embedded Cu nanoparticles
Amorphous SiC resistive memory with embedded Cu nanoparticles
Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/a-SiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu. Reduced forming and SET voltages and increased endurance was observed for devices with 30Cu%. At the same time, all key advantageous characteristics of amorphous SiC resistive memory such as ON/OFF ratio of 107 and the co-existence of bipolar and unipolar modes were maintained upon Cu embedding. All above suggests that Cu embedding could be considered as a promising method to improve the overall performance of Cu/a-SiC:Cu/Au resistive memories.
0167-9317
1-5
Fan, Junqing
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Jiang, Liudi
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Wang, Shuncai
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Huang, Ruomeng
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Morgan, Katrina
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Zhong, Le
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de Groot, Kees
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Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Wang, Shuncai
8a390e2d-6552-4c7c-a88f-25bf9d6986a6
Huang, Ruomeng
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Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
de Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Fan, Junqing, Jiang, Liudi, Wang, Shuncai, Huang, Ruomeng, Morgan, Katrina, Zhong, Le and de Groot, Kees (2017) Amorphous SiC resistive memory with embedded Cu nanoparticles. [in special issue: Micro/Nano Devices and Systems Edited by Bernhard Jakoby and Roman Beigelbeck] Microelectronic Engineering, 174, 1-5. (doi:10.1016/j.mee.2016.12.005).

Record type: Article

Abstract

Amorphous SiC with embedded Cu nanoparticles (a-SiC:Cu) was investigated as the insulator layer of Cu/a-SiC:Cu/Au resistive memory. The effect of the Cu embedding on resistive switching characteristics was studied for 20 and 30 vol% Cu. Reduced forming and SET voltages and increased endurance was observed for devices with 30Cu%. At the same time, all key advantageous characteristics of amorphous SiC resistive memory such as ON/OFF ratio of 107 and the co-existence of bipolar and unipolar modes were maintained upon Cu embedding. All above suggests that Cu embedding could be considered as a promising method to improve the overall performance of Cu/a-SiC:Cu/Au resistive memories.

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Accepted/In Press date: 8 December 2016
e-pub ahead of print date: 10 December 2016
Published date: 25 April 2017
Organisations: Engineering Mats & Surface Engineerg Gp, Optoelectronics Research Centre, Nanoelectronics and Nanotechnology, Engineering Sciences

Identifiers

Local EPrints ID: 404055
URI: http://eprints.soton.ac.uk/id/eprint/404055
ISSN: 0167-9317
PURE UUID: a07705c4-6f58-4ca9-845e-30a849f593b0
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Kees de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 20 Dec 2016 10:16
Last modified: 07 Oct 2020 05:29

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Contributors

Author: Junqing Fan
Author: Liudi Jiang ORCID iD
Author: Shuncai Wang
Author: Ruomeng Huang
Author: Katrina Morgan ORCID iD
Author: Le Zhong
Author: Kees de Groot ORCID iD

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