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Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates

Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates
Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates
Pt/TiO x /Pt resistive switching (RS) devices are considered to be amongst the most promising candidates in memristor family and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible RS memory technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiO x /Pt stack onto flexible Parylene-C substrates. The devices were electrically characterised, exhibiting both digital and analogue memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in neuromorphic computing, data processing, implantable sensors and bio-compatible neural interfaces.
0957-4484
1-10
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Cortese, Simone
11e9dba1-e712-4dd7-940f-b6609b3be3d4
Serb, Alexander
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Khiat, Ali, Cortese, Simone, Serb, Alexander and Prodromakis, Themis (2016) Resistive switching of Pt/TiOx/Pt devices fabricated on flexible Parylene-C substrates. Nanotechnology, 28 (2), 1-10. (doi:10.1088/1361-6528/28/2/025303).

Record type: Article

Abstract

Pt/TiO x /Pt resistive switching (RS) devices are considered to be amongst the most promising candidates in memristor family and the technology transfer to flexible substrates could open the way to new opportunities for flexible memory implementations. Hence, an important goal is to achieve a fully flexible RS memory technology. Nonetheless, several fabrication challenges are present and must be solved prior to achieving reliable device fabrication and good electronic performances. Here, we propose a fabrication method for the successful transfer of Pt/TiO x /Pt stack onto flexible Parylene-C substrates. The devices were electrically characterised, exhibiting both digital and analogue memory characteristics, which are obtained by proper adjustment of pulsing schemes during tests. This approach could open new application possibilities of these devices in neuromorphic computing, data processing, implantable sensors and bio-compatible neural interfaces.

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More information

Accepted/In Press date: 22 November 2016
e-pub ahead of print date: 7 December 2016
Published date: 7 December 2016
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 405070
URI: https://eprints.soton.ac.uk/id/eprint/405070
ISSN: 0957-4484
PURE UUID: 8af3491e-75ff-4efb-9401-a79412d7bcb0
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 31 Jan 2017 10:01
Last modified: 10 Dec 2019 06:14

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