A circuit model for defective bilayer graphene transistors

Umoh, Ime, Moktadir, Zakaria and Kazmierski, Tomasz et al. (2016) A circuit model for defective bilayer graphene transistors. Solid-State Electronics, 119, supplement p 33-38, 33-38. (doi:10.1016/j.sse.2016.02.003).

Record type: Article

Abstract

This paper investigates the behaviour of a defective single-gate bilayer graphene transistor. Point defects were introduced into pristine graphene crystal structure using a tightly focused helium ion beam. The transfer characteristics of the exposed transistors were measured ex-situ for different defect concentrations. The channel peak resistance increased with increasing defect concentration whilst the on–off ratio showed a decreasing trend for both electrons and holes. To understand the electrical behaviour of the transistors, a circuit model for bilayer graphene is developed which shows a very good agreement when validated against experimental data. The model allowed parameter extraction of bilayer transistor and can be implemented in circuit level simulators.

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