The University of Southampton
University of Southampton Institutional Repository

Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures
Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures
The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard Complementary Metal-Oxide-Semiconductor Field-Effect-Transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due to local structural disturbances such as roughness and defects. In fact, we observed Coulomb blockades in sub-threshold regimes of both {\it p}-type and {\it n}-type Si CMOSFETs, showing the presence of quantum dots in the channels. The stability diagrams for the Coulomb blockade were explained by the potential minima due to poly-Si grains. We have also observed sharp current peaks at narrow bias windows at the edges of the Coulomb diamonds, showing resonant tunnelling of single carriers through charge traps.
0268-1242
1-7
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Yoshimoto, Hiroyuki
4dc99648-221b-4822-9063-884e6163fab5
Tani, Kazuki
1552512f-5b92-4f4a-bcc9-110f9704239a
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Fletcher, Jonathan
a1e58a2a-d530-45dd-8160-c04c44e97ab3
Kataoka, Masaya
4d233e18-0f92-4347-9151-13f39e1afafd
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Yoshimoto, Hiroyuki
4dc99648-221b-4822-9063-884e6163fab5
Tani, Kazuki
1552512f-5b92-4f4a-bcc9-110f9704239a
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Fletcher, Jonathan
a1e58a2a-d530-45dd-8160-c04c44e97ab3
Kataoka, Masaya
4d233e18-0f92-4347-9151-13f39e1afafd
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Li, Zuo, Husain, Muhammad, Yoshimoto, Hiroyuki, Tani, Kazuki, Sasago, Yoshitaka, Hisamoto, Digh, Fletcher, Jonathan, Kataoka, Masaya, Tsuchiya, Yoshishige and Saito, Shinichi (2017) Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures. Semiconductor Science and Technology, 1-7. (doi:10.1088/1361-6641/aa6910).

Record type: Article

Abstract

The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard Complementary Metal-Oxide-Semiconductor Field-Effect-Transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due to local structural disturbances such as roughness and defects. In fact, we observed Coulomb blockades in sub-threshold regimes of both {\it p}-type and {\it n}-type Si CMOSFETs, showing the presence of quantum dots in the channels. The stability diagrams for the Coulomb blockade were explained by the potential minima due to poly-Si grains. We have also observed sharp current peaks at narrow bias windows at the edges of the Coulomb diamonds, showing resonant tunnelling of single carriers through charge traps.

Text
Zuo_SST_revised_Clean - Accepted Manuscript
Available under License Creative Commons Attribution.
Download (1MB)

More information

Accepted/In Press date: 24 March 2017
e-pub ahead of print date: 24 March 2017
Published date: 25 May 2017
Organisations: Nanoelectronics and Nanotechnology, Electronics & Computer Science

Identifiers

Local EPrints ID: 407351
URI: http://eprints.soton.ac.uk/id/eprint/407351
ISSN: 0268-1242
PURE UUID: f69aa71b-835f-4e44-8a13-02bba91ce186
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 04 Apr 2017 01:05
Last modified: 07 Oct 2020 03:36

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×