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A full wafer dicing free dry release process for MEMS devices

A full wafer dicing free dry release process for MEMS devices
A full wafer dicing free dry release process for MEMS devices
This paper presents a full wafer, dicing free, dry release process using hydrofluoric acid (HF) vapour phase etching (VPE) for MEMS sensors and actuators fabricated using silicon on insulator (SOI) wafers. It is particularly beneficial to MEMS sensors whose performance benefits from a large proof mass, for example accelerometers and gyroscopes. Such a fabrication method was first proposed by Overstolz et al. where the wafer level release steps for a tilting platform measuring 2×2 mm2 were presented Overstolz et al. (2004) . In the work described here, the process is extended to the full wafer release of an accelerometer with a large proof mass measuring 4×7 mm2. The sensor was successfully fabricated with a yield of over 95%.
850-853
Sari, Ibrahim
cdcb1265-4a94-4c5a-b8b1-f1ca7e6759d7
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Kraft, Michael
c2ff2439-b909-4af3-824d-9d7c0d14dc3e
Sari, Ibrahim
cdcb1265-4a94-4c5a-b8b1-f1ca7e6759d7
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Kraft, Michael
c2ff2439-b909-4af3-824d-9d7c0d14dc3e

Sari, Ibrahim, Zeimpekis, Ioannis and Kraft, Michael (2010) A full wafer dicing free dry release process for MEMS devices. pp. 850-853 . (doi:10.1016/j.proeng.2010.09.242).

Record type: Conference or Workshop Item (Paper)

Abstract

This paper presents a full wafer, dicing free, dry release process using hydrofluoric acid (HF) vapour phase etching (VPE) for MEMS sensors and actuators fabricated using silicon on insulator (SOI) wafers. It is particularly beneficial to MEMS sensors whose performance benefits from a large proof mass, for example accelerometers and gyroscopes. Such a fabrication method was first proposed by Overstolz et al. where the wafer level release steps for a tilting platform measuring 2×2 mm2 were presented Overstolz et al. (2004) . In the work described here, the process is extended to the full wafer release of an accelerometer with a large proof mass measuring 4×7 mm2. The sensor was successfully fabricated with a yield of over 95%.

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Published date: 1 September 2010
Organisations: NANO

Identifiers

Local EPrints ID: 409584
URI: http://eprints.soton.ac.uk/id/eprint/409584
PURE UUID: 0c7a4a95-dd16-4e4c-ace8-21681ac5b130
ORCID for Ioannis Zeimpekis: ORCID iD orcid.org/0000-0002-7455-1599

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Date deposited: 31 May 2017 04:01
Last modified: 16 Mar 2024 04:06

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Contributors

Author: Ibrahim Sari
Author: Michael Kraft

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