Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor
Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor
Synopsys Sentaurus TCAD simulation of 400 nm SiO2 capacitor under gamma irradiation.
Dataset supports:
Chatzikyriakou, Eleni et al (2017) A systematic method for simulating total ionizing dose effects using the finite elements method. Journal of Computational Electronics.
Funded by EPSRC award 1304067.
TCAD simulation, total ionizing dose, gamma radiation, capacitor, CMOS, finite element method (FEM)
University of Southampton
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni
(2017)
Total Ionizing Dose TCAD simulation of 400 nm SiO2 capacitor.
University of Southampton
doi:10.5258/SOTON/D137
[Dataset]
Abstract
Synopsys Sentaurus TCAD simulation of 400 nm SiO2 capacitor under gamma irradiation.
Dataset supports:
Chatzikyriakou, Eleni et al (2017) A systematic method for simulating total ionizing dose effects using the finite elements method. Journal of Computational Electronics.
Funded by EPSRC award 1304067.
Archive
PostRad_Transient_20krad_ManyEt.zip
- Dataset
Archive
PreRad_Not_pt_PostRad_IntCh.zip
- Dataset
More information
Published date: 23 June 2017
Keywords:
TCAD simulation, total ionizing dose, gamma radiation, capacitor, CMOS, finite element method (FEM)
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 412071
URI: http://eprints.soton.ac.uk/id/eprint/412071
PURE UUID: 9879cfb5-e894-44f5-9bc2-730adeac894e
Catalogue record
Date deposited: 05 Jul 2017 16:32
Last modified: 05 Nov 2023 02:38
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Contributors
Creator:
Eleni Chatzikyriakou
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