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Correlated resistive/capacitive state variability in solid TiO2 based memory devices

Correlated resistive/capacitive state variability in solid TiO2 based memory devices
Correlated resistive/capacitive state variability in solid TiO2 based memory devices
In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.
0947-8396
Li, Qingjiang
42d73561-5916-4229-ac0f-fdfd93fd3637
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Xu, Hui
552bd821-498f-49c0-b384-053c0da90b58
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Li, Qingjiang
42d73561-5916-4229-ac0f-fdfd93fd3637
Salaoru, Iulia
bfec063f-78ec-471f-8139-eb4e4787fb21
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Xu, Hui
552bd821-498f-49c0-b384-053c0da90b58
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Li, Qingjiang, Salaoru, Iulia, Khiat, Ali, Xu, Hui and Prodromakis, Themistoklis (2017) Correlated resistive/capacitive state variability in solid TiO2 based memory devices. Applied Physics A: Materials Science & Processing, 123 (5), [327]. (doi:10.1007/s00339-017-0991-5).

Record type: Article

Abstract

In this work, we experimentally demonstrated the correlated resistive/capacitive switching and state variability in practical TiO2 based memory devices. Based on filamentary functional mechanism, we argue that the impedance state variability stems from the randomly distributed defects inside the oxide bulk. Finally, our assumption was verified via a current percolation circuit model, by taking into account of random defects distribution and coexistence of memristor and memcapacitor.

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Correlated Resistive/Capacitive State Variability in Solid TiO2 based Memory Devices - Accepted Manuscript
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Accepted/In Press date: 19 April 2017
e-pub ahead of print date: 25 April 2017
Published date: May 2017

Identifiers

Local EPrints ID: 412077
URI: http://eprints.soton.ac.uk/id/eprint/412077
DOI: doi:10.1007/s00339-017-0991-5
ISSN: 0947-8396
PURE UUID: b9eae200-db8b-4ad7-9cf6-1a1e670da361
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 06 Jul 2017 16:30
Last modified: 16 Mar 2024 05:30

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Contributors

Author: Qingjiang Li
Author: Iulia Salaoru
Author: Ali Khiat
Author: Hui Xu
Author: Themistoklis Prodromakis ORCID iD

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