(2017) Data for 'Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristics'. University of Southampton doi:10.5258/SOTON/D0055 [Dataset]
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Dataset
Abstract
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ave used ultra-thin Al2O3-y buffer layers incorporated between TiO2-x thin 
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reservoirs of oxygen vacancies which are injected during EF, facilitate a 
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g EF, facilitate a lamentary switching mechanism and provide enhanced 
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Dataset_JAP_2017.xlsx
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Published date: 2017
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Organisations:
Electronics & Computer Science
Identifiers
Local EPrints ID: 412116
URI: http://eprints.soton.ac.uk/id/eprint/412116
PURE UUID: 6e27abe5-fe00-461c-9d3e-83f75a21260d
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Date deposited: 11 Jul 2017 09:59
Last modified: 04 Nov 2023 06:36
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Owner:
Maria Trapatseli
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