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SiGe bandgap tuning for high speed eam

SiGe bandgap tuning for high speed eam
SiGe bandgap tuning for high speed eam
We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.
1938-5862
59-63
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2

Mastronardi, Lorenzo, Banakar, Mehdi, Khokhar, Ali, Domínguez Bucio, Thalía, Littlejohns, Callum, Mashanovich, Goran and Gardes, Frederic (2017) SiGe bandgap tuning for high speed eam. ECS Transactions, 77 (6), 59-63. (doi:10.1149/07706.0059ecst).

Record type: Article

Abstract

We report bandgap engineering of Ge rich SiGe rib waveguides between 1550 nm and 1580 nm through an annealing process. The insertion loss of the material (transmission spectrum) is analysed between 1520 nm and 1600 nm. The experimental data are elaborated by implementing the Tauc Method analysis, and the material bandgap estimation is calculated. A maximum blue shift of 38 nm, with an overall reduction of Si content, suggests that the diffusion of Si in the Ge seed layer during anneal improves the homogeneity of the growth layer. The proposed technique provides a path for tailoring the operational wavelength of devices such as electro-absorption modulators, realized on an SOI platform.

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SiGe Bandgap Tuning for High Speed Eam - Accepted Manuscript
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Accepted/In Press date: 4 April 2017
e-pub ahead of print date: 19 May 2017

Identifiers

Local EPrints ID: 412984
URI: https://eprints.soton.ac.uk/id/eprint/412984
ISSN: 1938-5862
PURE UUID: a8c93428-7a08-474c-b667-18c8b4ced912
ORCID for Lorenzo Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

Catalogue record

Date deposited: 10 Aug 2017 16:30
Last modified: 03 Dec 2019 01:29

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