Transversal symmetry breaking in novel photonic crystal waveguide: innovative manner to master defect band dispersion relation
Transversal symmetry breaking in novel photonic crystal waveguide: innovative manner to master defect band dispersion relation
We present a novel Photonic Crystal Slab (PhC) fabricated in Silicon (Si) with pattern edge along <11-2> direction. Such a design enabled a dry and wet etching processes combination to atomically flatten the sidewall surface defined by Si[111]. Moreover, a new method to tailor the relation dispersion of line defect PhC waveguide (W1) using this structure is introduced. By mismatching the upper and lower part of the waveguide in the propagation direction, FDTD simulations demonstrate a net shift of the Cut-Off wavelength from 1605nm to 1742nm for a mismatch of zero and half of the lattice constant of the crystal a, respectively. We discuss both use of this new PhC for repeatable photonic device on-chip integration and the benefit of this new waveguide design method to engineer large bandwidth mode.
Sotto, Moise, Sala Henri
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Debnath, Kapil
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Husain, Muhammad
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Li, Zuo
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Liu, Fayong
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Khokhar, Ali
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Saito, Shinichi
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19 September 2017
Sotto, Moise, Sala Henri
2e7797fc-4433-4513-bd08-03ab7839452c
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Sotto, Moise, Sala Henri, Debnath, Kapil, Husain, Muhammad, Li, Zuo, Liu, Fayong, Khokhar, Ali and Saito, Shinichi
(2017)
Transversal symmetry breaking in novel photonic crystal waveguide: innovative manner to master defect band dispersion relation.
49th International Conference on Solid State Devices and Materials (SSDM2017), , Sendai, Japan.
19 - 22 Sep 2017.
2 pp
.
Record type:
Conference or Workshop Item
(Other)
Abstract
We present a novel Photonic Crystal Slab (PhC) fabricated in Silicon (Si) with pattern edge along <11-2> direction. Such a design enabled a dry and wet etching processes combination to atomically flatten the sidewall surface defined by Si[111]. Moreover, a new method to tailor the relation dispersion of line defect PhC waveguide (W1) using this structure is introduced. By mismatching the upper and lower part of the waveguide in the propagation direction, FDTD simulations demonstrate a net shift of the Cut-Off wavelength from 1605nm to 1742nm for a mismatch of zero and half of the lattice constant of the crystal a, respectively. We discuss both use of this new PhC for repeatable photonic device on-chip integration and the benefit of this new waveguide design method to engineer large bandwidth mode.
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Conference_Paper
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In preparation date: 21 May 2017
Accepted/In Press date: 14 July 2017
Published date: 19 September 2017
Venue - Dates:
49th International Conference on Solid State Devices and Materials (SSDM2017), , Sendai, Japan, 2017-09-19 - 2017-09-22
Identifiers
Local EPrints ID: 414544
URI: http://eprints.soton.ac.uk/id/eprint/414544
PURE UUID: 4d2d94ba-ade8-439b-af51-a27b96862f2d
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Date deposited: 03 Oct 2017 16:31
Last modified: 16 Mar 2024 04:11
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Contributors
Author:
Moise, Sala Henri Sotto
Author:
Kapil Debnath
Author:
Muhammad Husain
Author:
Zuo Li
Author:
Fayong Liu
Author:
Ali Khokhar
Author:
Shinichi Saito
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