Mastronardi, Lorenzo, Banakar, Mehdi, Khokhar, Ali, Hattasan, Nannicha, Rutirawut, Teerapat, Domínguez Bucio, Thalía, Grabska, Katarzyna, Monika, Littlejohns, Callum, Bazin, Alexandre, Mashanovich, Goran and Gardes, Frederic (2018) High-speed Si/GeSi hetero-structure electro absorption modulator. Optics Express, 26 (6), 6663-6673. (doi:10.1364/OE.26.006663).
Abstract
The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.
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