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High-speed Si/GeSi hetero-structure electro absorption modulator

High-speed Si/GeSi hetero-structure electro absorption modulator
High-speed Si/GeSi hetero-structure electro absorption modulator
The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.
Waveguide modulators, Electro-optical devices, Optical interconnects
1094-4087
6663-6673
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Hattasan, Nannicha
4f163cbe-eaaa-4771-82c5-af34c9c97fe9
Rutirawut, Teerapat
e7350fb8-f14f-4d5b-ae8c-bc02b2132219
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Grabska, Katarzyna, Monika
5f82b736-08ad-4ddb-9f6a-01eea5f9975f
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Bazin, Alexandre
8245e0d4-0f89-4eea-8fc8-ee09ed7b7826
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Mastronardi, Lorenzo
5f46303c-8516-4038-bb3f-8720a3b28d25
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Hattasan, Nannicha
4f163cbe-eaaa-4771-82c5-af34c9c97fe9
Rutirawut, Teerapat
e7350fb8-f14f-4d5b-ae8c-bc02b2132219
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Grabska, Katarzyna, Monika
5f82b736-08ad-4ddb-9f6a-01eea5f9975f
Littlejohns, Callum
0fd6585d-030d-4d8f-a411-6fc03e083efa
Bazin, Alexandre
8245e0d4-0f89-4eea-8fc8-ee09ed7b7826
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2

Mastronardi, Lorenzo, Banakar, Mehdi, Khokhar, Ali, Hattasan, Nannicha, Rutirawut, Teerapat, Domínguez Bucio, Thalía, Grabska, Katarzyna, Monika, Littlejohns, Callum, Bazin, Alexandre, Mashanovich, Goran and Gardes, Frederic (2018) High-speed Si/GeSi hetero-structure electro absorption modulator. Optics Express, 26 (6), 6663-6673. (doi:10.1364/OE.26.006663).

Record type: Article

Abstract

The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.

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More information

Accepted/In Press date: 14 December 2017
e-pub ahead of print date: 5 March 2018
Published date: 19 March 2018
Keywords: Waveguide modulators, Electro-optical devices, Optical interconnects

Identifiers

Local EPrints ID: 416682
URI: https://eprints.soton.ac.uk/id/eprint/416682
ISSN: 1094-4087
PURE UUID: 0b49b760-aa28-4996-8a34-8604458e266b
ORCID for Lorenzo Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for Thalía Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

Catalogue record

Date deposited: 04 Jan 2018 17:30
Last modified: 03 Dec 2019 05:41

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