Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system
Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system
We discovered anomalous transport properties in a conventional Si based Metal-Oxide-Semiconductor Field-Effect-Transistor with a wide and narrow hole-channel at low temperatures. We found the quantum dipole formed at the thin gate interface is responsible for the phase transition. We discuss its potential to use for a quantum simulator as a test bed to examine various theoretical concepts in condensed-matter physics.
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Yoshimoto, Hiroyuki
4dc99648-221b-4822-9063-884e6163fab5
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Arimoto, Hideo
b88aab51-ad62-4127-9ca5-d86e3d714531
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Kurihara, Sususu
e74ce397-8b68-4163-bec5-d25847d6ea8c
22 September 2017
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Yoshimoto, Hiroyuki
4dc99648-221b-4822-9063-884e6163fab5
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Sasago, Yoshitaka
a8302892-f353-44a0-be5e-0227f2324e99
Arimoto, Hideo
b88aab51-ad62-4127-9ca5-d86e3d714531
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Hisamoto, Digh
b4e8e75d-443a-4cfc-9f77-42f7631cf8c8
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Kurihara, Sususu
e74ce397-8b68-4163-bec5-d25847d6ea8c
Saito, Shinichi, Li, Zuo, Yoshimoto, Hiroyuki, Tomita, Isao, Tsuchiya, Yoshishige, Sasago, Yoshitaka, Arimoto, Hideo, Liu, Fayong, Husain, Muhammad, Hisamoto, Digh, Rutt, Harvey and Kurihara, Sususu
(2017)
Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system.
49th International Conference on Solid State Devices and Materials (SSDM2017), , Sendai, Japan.
19 - 22 Sep 2017.
Record type:
Conference or Workshop Item
(Paper)
Abstract
We discovered anomalous transport properties in a conventional Si based Metal-Oxide-Semiconductor Field-Effect-Transistor with a wide and narrow hole-channel at low temperatures. We found the quantum dipole formed at the thin gate interface is responsible for the phase transition. We discuss its potential to use for a quantum simulator as a test bed to examine various theoretical concepts in condensed-matter physics.
Text
QuantumDipole_SSDM_Saito_rev1_reduced
- Accepted Manuscript
More information
Submitted date: 21 May 2017
Accepted/In Press date: 15 July 2017
Published date: 22 September 2017
Venue - Dates:
49th International Conference on Solid State Devices and Materials (SSDM2017), , Sendai, Japan, 2017-09-19 - 2017-09-22
Identifiers
Local EPrints ID: 417138
URI: http://eprints.soton.ac.uk/id/eprint/417138
PURE UUID: c0500a6c-06da-4da2-9a4b-fc50220bf4da
Catalogue record
Date deposited: 19 Jan 2018 17:31
Last modified: 16 Mar 2024 06:12
Export record
Contributors
Author:
Shinichi Saito
Author:
Zuo Li
Author:
Hiroyuki Yoshimoto
Author:
Isao Tomita
Author:
Yoshishige Tsuchiya
Author:
Yoshitaka Sasago
Author:
Hideo Arimoto
Author:
Fayong Liu
Author:
Muhammad Husain
Author:
Digh Hisamoto
Author:
Harvey Rutt
Author:
Sususu Kurihara
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics