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Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system

Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system
Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system
We discovered anomalous transport properties in a conventional Si based Metal-Oxide-Semiconductor Field-Effect-Transistor with a wide and narrow hole-channel at low temperatures. We found the quantum dipole formed at the thin gate interface is responsible for the phase transition. We discuss its potential to use for a quantum simulator as a test bed to examine various theoretical concepts in condensed-matter physics.
Saito, Shinichi
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Li, Zuo
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Yoshimoto, Hiroyuki
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Tomita, Isao
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Tsuchiya, Yoshishige
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Sasago, Yoshitaka
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Arimoto, Hideo
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Liu, Fayong
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Husain, Muhammad
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Hisamoto, Digh
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Rutt, Harvey
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Kurihara, Sususu
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Saito, Shinichi
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Li, Zuo
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Yoshimoto, Hiroyuki
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Tomita, Isao
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Tsuchiya, Yoshishige
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Sasago, Yoshitaka
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Arimoto, Hideo
b88aab51-ad62-4127-9ca5-d86e3d714531
Liu, Fayong
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Husain, Muhammad
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Hisamoto, Digh
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Rutt, Harvey
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Kurihara, Sususu
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Saito, Shinichi, Li, Zuo, Yoshimoto, Hiroyuki, Tomita, Isao, Tsuchiya, Yoshishige, Sasago, Yoshitaka, Arimoto, Hideo, Liu, Fayong, Husain, Muhammad, Hisamoto, Digh, Rutt, Harvey and Kurihara, Sususu (2017) Quantum dipole in a silicon transistor: Quantum simulation for strongly correlated system. 2017 International Conference on Solid State Devices and Materials, ,, Japan. 19 - 22 Sep 2017.

Record type: Conference or Workshop Item (Paper)

Abstract

We discovered anomalous transport properties in a conventional Si based Metal-Oxide-Semiconductor Field-Effect-Transistor with a wide and narrow hole-channel at low temperatures. We found the quantum dipole formed at the thin gate interface is responsible for the phase transition. We discuss its potential to use for a quantum simulator as a test bed to examine various theoretical concepts in condensed-matter physics.

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QuantumDipole_SSDM_Saito_rev1_reduced - Accepted Manuscript
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More information

Submitted date: 21 May 2017
Accepted/In Press date: 15 July 2017
Published date: 22 September 2017
Venue - Dates: 2017 International Conference on Solid State Devices and Materials, ,, Japan, 2017-09-19 - 2017-09-22

Identifiers

Local EPrints ID: 417138
URI: http://eprints.soton.ac.uk/id/eprint/417138
PURE UUID: c0500a6c-06da-4da2-9a4b-fc50220bf4da
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720

Catalogue record

Date deposited: 19 Jan 2018 17:31
Last modified: 03 Nov 2020 05:01

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Contributors

Author: Shinichi Saito ORCID iD
Author: Zuo Li
Author: Hiroyuki Yoshimoto
Author: Isao Tomita
Author: Yoshishige Tsuchiya
Author: Yoshitaka Sasago
Author: Hideo Arimoto
Author: Fayong Liu ORCID iD
Author: Muhammad Husain
Author: Digh Hisamoto
Author: Harvey Rutt
Author: Sususu Kurihara

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