Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.
silicon-on-insulator, Transistors, logic gates, Silicon, radiation effects, integrated circuits, doping, resistive memory, thin film, MoS2, graphene, 2D, Total Ionizing Dose
1-12
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
30 January 2018
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni, Morgan, Katrina and De Groot, Cornelis
(2018)
Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond.
IEEE Transactions on Electron Devices, (99), .
(doi:10.1109/TED.2018.2792305).
Abstract
From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.
Text
08272514_002
- Accepted Manuscript
More information
Published date: 30 January 2018
Keywords:
silicon-on-insulator, Transistors, logic gates, Silicon, radiation effects, integrated circuits, doping, resistive memory, thin film, MoS2, graphene, 2D, Total Ionizing Dose
Identifiers
Local EPrints ID: 417676
URI: http://eprints.soton.ac.uk/id/eprint/417676
PURE UUID: 09f29ba3-7d51-4fde-915e-1efbb4633ea8
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Date deposited: 09 Feb 2018 17:30
Last modified: 16 Mar 2024 04:05
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Author:
Eleni Chatzikyriakou
Author:
Katrina Morgan
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