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Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond

Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond
From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.
silicon-on-insulator, Transistors, logic gates, Silicon, radiation effects, integrated circuits, doping, resistive memory, thin film, MoS2, graphene, 2D, Total Ionizing Dose
1-12
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Chatzikyriakou, Eleni
3898b429-c7ef-42a3-8fca-d6e8c85b27fb
Morgan, Katrina
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c

Chatzikyriakou, Eleni, Morgan, Katrina and De Groot, Cornelis (2018) Total Ionizing dose hardened and mitigation strategies in deep submicrometer CMOS and beyond. IEEE Transactions on Electron Devices, (99), 1-12. (doi:10.1109/TED.2018.2792305).

Record type: Article

Abstract

From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.

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08272514_002 - Accepted Manuscript
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Published date: 30 January 2018
Keywords: silicon-on-insulator, Transistors, logic gates, Silicon, radiation effects, integrated circuits, doping, resistive memory, thin film, MoS2, graphene, 2D, Total Ionizing Dose

Identifiers

Local EPrints ID: 417676
URI: http://eprints.soton.ac.uk/id/eprint/417676
PURE UUID: 09f29ba3-7d51-4fde-915e-1efbb4633ea8
ORCID for Eleni Chatzikyriakou: ORCID iD orcid.org/0000-0002-5624-3701
ORCID for Katrina Morgan: ORCID iD orcid.org/0000-0002-8600-4322
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 09 Feb 2018 17:30
Last modified: 15 Sep 2021 01:57

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Contributors

Author: Eleni Chatzikyriakou ORCID iD
Author: Katrina Morgan ORCID iD

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