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Advanced layout techniques for high-speed analogue circuits in a 28nm HKMG CMOS process

Advanced layout techniques for high-speed analogue circuits in a 28nm HKMG CMOS process
Advanced layout techniques for high-speed analogue circuits in a 28nm HKMG CMOS process
This paper investigates the effect of optimizing the transistor finger width on the performance of high-speed analogue circuits in deep sub-micron processes, demonstrated in a 28nm High-K/Metal Gate (HKMG) CMOS technology process. Silicon proven results demonstrate that the oscillator with a finger width of 440nm gives the best performance based on the Figure of Merit (=142) among the benchmark design examples used.
Oscillator, High-K/Metal Gat, layout
0013-5194
486-488
Meng, Fanfan
3c45926e-5e27-4c33-8601-ccf624b240c2
Li, Ke
dd788ca7-0a39-4364-b4b8-65f0bb93340f
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Wilson, Peter
f681b45d-70e5-48d0-90ad-ec2aefdc4ac7
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Meng, Fanfan
3c45926e-5e27-4c33-8601-ccf624b240c2
Li, Ke
dd788ca7-0a39-4364-b4b8-65f0bb93340f
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Wilson, Peter
f681b45d-70e5-48d0-90ad-ec2aefdc4ac7
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139

Meng, Fanfan, Li, Ke, Thomson, David, Wilson, Peter and Reed, Graham (2018) Advanced layout techniques for high-speed analogue circuits in a 28nm HKMG CMOS process. Electronics Letters, 54 (8), 486-488. (doi:10.1049/el.2017.4453).

Record type: Article

Abstract

This paper investigates the effect of optimizing the transistor finger width on the performance of high-speed analogue circuits in deep sub-micron processes, demonstrated in a 28nm High-K/Metal Gate (HKMG) CMOS technology process. Silicon proven results demonstrate that the oscillator with a finger width of 440nm gives the best performance based on the Figure of Merit (=142) among the benchmark design examples used.

Text
EL.2017.4453 - Accepted Manuscript
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More information

Accepted/In Press date: 20 February 2018
e-pub ahead of print date: 8 March 2018
Published date: 19 April 2018
Keywords: Oscillator, High-K/Metal Gat, layout

Identifiers

Local EPrints ID: 418244
URI: http://eprints.soton.ac.uk/id/eprint/418244
ISSN: 0013-5194
PURE UUID: 2e81f08d-4b34-4ec4-9cd4-83655012d39c

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Date deposited: 26 Feb 2018 17:30
Last modified: 15 Mar 2024 18:36

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Contributors

Author: Fanfan Meng
Author: Ke Li
Author: David Thomson
Author: Peter Wilson
Author: Graham Reed

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