Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures
Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise (RTN) in advanced Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). We measured a p-type MOSFET at 2K, and found narrow bias conditions to observe the RTN presumably caused by charge trapping and de-trapping, which were only observed at low temperatures. It will pave the way to address the nature of a trap, which will be useful to understand the mechanism of RTN to secure the reliability.
1-3
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Sotto, Moise, Sala Henri
2e7797fc-4433-4513-bd08-03ab7839452c
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
1 March 2017
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Sotto, Moise, Sala Henri
2e7797fc-4433-4513-bd08-03ab7839452c
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Li, Zuo, Liu, Fayong, Saito, Shinichi, Husain, Muhammad, Sotto, Moise, Sala Henri and Tsuchiya, Yoshishige
(2017)
Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures.
2017 IEEE Electron Devices Technology and Manufacturing Conference, , Toyama, Japan.
28 Feb - 02 Mar 2017.
.
(doi:10.1109/EDTM.2017.7947569).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise (RTN) in advanced Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). We measured a p-type MOSFET at 2K, and found narrow bias conditions to observe the RTN presumably caused by charge trapping and de-trapping, which were only observed at low temperatures. It will pave the way to address the nature of a trap, which will be useful to understand the mechanism of RTN to secure the reliability.
Text
EDTM_Zuo_3Page_Final
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Published date: 1 March 2017
Venue - Dates:
2017 IEEE Electron Devices Technology and Manufacturing Conference, , Toyama, Japan, 2017-02-28 - 2017-03-02
Identifiers
Local EPrints ID: 418401
URI: http://eprints.soton.ac.uk/id/eprint/418401
PURE UUID: 733f5040-4dd8-430d-b256-d53754356097
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Date deposited: 06 Mar 2018 17:30
Last modified: 16 Mar 2024 04:11
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Contributors
Author:
Zuo Li
Author:
Fayong Liu
Author:
Shinichi Saito
Author:
Muhammad Husain
Author:
Moise, Sala Henri Sotto
Author:
Yoshishige Tsuchiya
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