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Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures

Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures
Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise (RTN) in advanced Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). We measured a p-type MOSFET at 2K, and found narrow bias conditions to observe the RTN presumably caused by charge trapping and de-trapping, which were only observed at low temperatures. It will pave the way to address the nature of a trap, which will be useful to understand the mechanism of RTN to secure the reliability.
1-3
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Sotto, Moise, Sala Henri
2e7797fc-4433-4513-bd08-03ab7839452c
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Husain, Muhammad
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Sotto, Moise, Sala Henri
2e7797fc-4433-4513-bd08-03ab7839452c
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2

Li, Zuo, Liu, Fayong, Saito, Shinichi, Husain, Muhammad, Sotto, Moise, Sala Henri and Tsuchiya, Yoshishige (2017) Random-Telegraph-Noise by Resonant Tunnelling at Low Temperatures. 2017 IEEE Electron Devices Technology and Manufacturing Conference, Japan. 28 Feb - 02 Mar 2017. pp. 1-3 . (doi:10.1109/EDTM.2017.7947569).

Record type: Conference or Workshop Item (Paper)

Abstract

We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise (RTN) in advanced Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). We measured a p-type MOSFET at 2K, and found narrow bias conditions to observe the RTN presumably caused by charge trapping and de-trapping, which were only observed at low temperatures. It will pave the way to address the nature of a trap, which will be useful to understand the mechanism of RTN to secure the reliability.

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EDTM_Zuo_3Page_Final - Accepted Manuscript
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Published date: 1 March 2017
Venue - Dates: 2017 IEEE Electron Devices Technology and Manufacturing Conference, Japan, 2017-02-28 - 2017-03-02

Identifiers

Local EPrints ID: 418401
URI: http://eprints.soton.ac.uk/id/eprint/418401
PURE UUID: 733f5040-4dd8-430d-b256-d53754356097
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 06 Mar 2018 17:30
Last modified: 07 Oct 2020 03:36

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Contributors

Author: Zuo Li
Author: Fayong Liu ORCID iD
Author: Shinichi Saito ORCID iD
Author: Muhammad Husain
Author: Moise, Sala Henri Sotto
Author: Yoshishige Tsuchiya

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