Conduction mechanisms in Pt/TiO2/Pt memristors
Conduction mechanisms in Pt/TiO2/Pt memristors
Resistive random access memories (RRAMs) receive increasing attention as very promising candidates for the next generation of nonvolatile memories, as well as for artificial neuronetworks and reconfigurable systems developments. A key feature for the aforementioned applications is their ability to obtain multiple resistive levels by proper tuning of the biasing schemes. Therefore, clarification of the dominant conduction mechanism, which remains to date a topic of debate, is of a paramount importance. This strongly depends on the device characteristics (oxide and electrodes’ materials) and the programming bias schemes.
& more...
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michalas, Loukas, Stathopoulos, Spyros, Khiat, Ali and Prodromakis, Themis
(2018)
Conduction mechanisms in Pt/TiO2/Pt memristors.
International Conference on Memristive Materials, Devices & Systems<br/>, China National Convention Center, Beijing, China.
03 - 06 Jul 2018.
(In Press)
Record type:
Conference or Workshop Item
(Other)
Abstract
Resistive random access memories (RRAMs) receive increasing attention as very promising candidates for the next generation of nonvolatile memories, as well as for artificial neuronetworks and reconfigurable systems developments. A key feature for the aforementioned applications is their ability to obtain multiple resistive levels by proper tuning of the biasing schemes. Therefore, clarification of the dominant conduction mechanism, which remains to date a topic of debate, is of a paramount importance. This strongly depends on the device characteristics (oxide and electrodes’ materials) and the programming bias schemes.
& more...
Text
L.Michalas-conduction mechanims
- Author's Original
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Accepted/In Press date: 2018
Venue - Dates:
International Conference on Memristive Materials, Devices & Systems<br/>, China National Convention Center, Beijing, China, 2018-07-03 - 2018-07-06
Identifiers
Local EPrints ID: 421183
URI: http://eprints.soton.ac.uk/id/eprint/421183
PURE UUID: d99ff1d4-2fc1-484f-a65c-6d95cb25624d
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Date deposited: 24 May 2018 16:30
Last modified: 16 Mar 2024 06:40
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Contributors
Author:
Loukas Michalas
Author:
Spyros Stathopoulos
Author:
Ali Khiat
Author:
Themis Prodromakis
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