The University of Southampton
University of Southampton Institutional Repository

Conduction mechanisms in Pt/TiO2/Pt memristors

Conduction mechanisms in Pt/TiO2/Pt memristors
Conduction mechanisms in Pt/TiO2/Pt memristors
Resistive random access memories (RRAMs) receive increasing attention as very promising candidates for the next generation of nonvolatile memories, as well as for artificial neuronetworks and reconfigurable systems developments. A key feature for the aforementioned applications is their ability to obtain multiple resistive levels by proper tuning of the biasing schemes. Therefore, clarification of the dominant conduction mechanism, which remains to date a topic of debate, is of a paramount importance. This strongly depends on the device characteristics (oxide and electrodes’ materials) and the programming bias schemes. & more...
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Michalas, Loukas, Stathopoulos, Spyros, Khiat, Ali and Prodromakis, Themis (2018) Conduction mechanisms in Pt/TiO2/Pt memristors. International Conference on Memristive Materials, Devices &amp; Systems<br/>, China National Convention Center, Beijing, China. 03 - 06 Jul 2018. (In Press)

Record type: Conference or Workshop Item (Other)

Abstract

Resistive random access memories (RRAMs) receive increasing attention as very promising candidates for the next generation of nonvolatile memories, as well as for artificial neuronetworks and reconfigurable systems developments. A key feature for the aforementioned applications is their ability to obtain multiple resistive levels by proper tuning of the biasing schemes. Therefore, clarification of the dominant conduction mechanism, which remains to date a topic of debate, is of a paramount importance. This strongly depends on the device characteristics (oxide and electrodes’ materials) and the programming bias schemes. & more...

Text
L.Michalas-conduction mechanims - Author's Original
Download (240kB)

More information

Accepted/In Press date: 2018
Venue - Dates: International Conference on Memristive Materials, Devices &amp; Systems<br/>, China National Convention Center, Beijing, China, 2018-07-03 - 2018-07-06

Identifiers

Local EPrints ID: 421183
URI: http://eprints.soton.ac.uk/id/eprint/421183
PURE UUID: d99ff1d4-2fc1-484f-a65c-6d95cb25624d
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 24 May 2018 16:30
Last modified: 16 Mar 2024 06:40

Export record

Contributors

Author: Loukas Michalas
Author: Spyros Stathopoulos ORCID iD
Author: Ali Khiat
Author: Themis Prodromakis ORCID iD

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×