Interface barriers at Metal – TiO2 contacts

Michalas, Loukas, Khiat, Ali, Stathopoulos, Spyros and Prodromakis, Themis (2018) Interface barriers at Metal – TiO₂ contacts. International Conference on Memristive Materials, Devices & Systems<br/>, China National Convention Center, Beijing, China. 03 - 06 Jul 2018.

Record type: Conference or Workshop Item (Other)

Abstract

Metal-oxides combine a unique ensemble of properties presenting great potential to meet the diverse requirements of modern electronics and in particular of brain-inspired applications. Among others, TiO₂ is without a doubt one of the most celebrated materials. The ability of TiO₂ to obtain different microstructures (i.e. amorphous, rutile etc.) and thus a plethora of electronic properties that can be determined/controlled by the fabrication and/or biasing conditions augmented its use in practical applications, such as memristors, TFTs and sensors. Notwithstanding the importance of the active layer, identifying appropriate metal contacts and deciphering their interfacial role is also of paramount importance to a device’s electrical behaviour. This paper aims to present a detailed quantitative electrical characterization study of Metal-TiO₂ interface characteristics.& more...

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L.Michalas et al.-Interface barriers at Metal-TiO2 contacts - Author's Original

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Accepted/In Press date: 2018

Published date: 6 July 2018

Venue - Dates: International Conference on Memristive Materials, Devices & Systems<br/>, China National Convention Center, Beijing, China, 2018-07-03 - 2018-07-06

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