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Multichannel ZnO nanowire field effect transistors by lift-off process

Multichannel ZnO nanowire field effect transistors by lift-off process
Multichannel ZnO nanowire field effect transistors by lift-off process
This paper describes a new, low-cost, top-down fabrication process, which makes it possible to define nanowire field effect transistor arrays with different numbers of nanowires simultaneously and systematically comparing their electrical performance. The main feature of this process is a developed bilayer photoresist pattern with a retrograde profile, which enables the modification of the nanowire in width, length, height and the number of transistor channels. The approach is compatible with low-cost manufacture without electron beam lithography, and benefits from process temperatures below 190 °C. Process reliability has been investigated by scanning electron microscopy, transmission electron microscopy and atomic force microscopy. Electrical measurements demonstrate enhancement mode transistors, which show a scalable correlation between the number of nanowires and the electrical characteristics. Devices with 100 nanowires exhibit the best performance with a high field effect mobility of 11.0 cm2 Vs–1, on/off current ratio of 3.97 × 107 and subthreshold swing of 0.66 V dec–1.
0957-4484
1-11
Ebert, Martin
f412aa6c-50da-4d94-b56e-a0e718d1cb1e
Ghazali, Nor Azlin, Binti
95cd0479-dcb4-485c-8de5-009e4f02371f
Kiang, Kian
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Maerz, B.
1403b81b-45a5-4003-91bd-7b79521228b7
De Planque, Maurits
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ebert, Martin
f412aa6c-50da-4d94-b56e-a0e718d1cb1e
Ghazali, Nor Azlin, Binti
95cd0479-dcb4-485c-8de5-009e4f02371f
Kiang, Kian
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Maerz, B.
1403b81b-45a5-4003-91bd-7b79521228b7
De Planque, Maurits
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Ebert, Martin, Ghazali, Nor Azlin, Binti, Kiang, Kian, Zeimpekis, Ioannis, Maerz, B., De Planque, Maurits and Chong, Harold (2018) Multichannel ZnO nanowire field effect transistors by lift-off process. Nanotechnology, 29 (41), 1-11. (doi:10.1088/1361-6528/aad4c5).

Record type: Article

Abstract

This paper describes a new, low-cost, top-down fabrication process, which makes it possible to define nanowire field effect transistor arrays with different numbers of nanowires simultaneously and systematically comparing their electrical performance. The main feature of this process is a developed bilayer photoresist pattern with a retrograde profile, which enables the modification of the nanowire in width, length, height and the number of transistor channels. The approach is compatible with low-cost manufacture without electron beam lithography, and benefits from process temperatures below 190 °C. Process reliability has been investigated by scanning electron microscopy, transmission electron microscopy and atomic force microscopy. Electrical measurements demonstrate enhancement mode transistors, which show a scalable correlation between the number of nanowires and the electrical characteristics. Devices with 100 nanowires exhibit the best performance with a high field effect mobility of 11.0 cm2 Vs–1, on/off current ratio of 3.97 × 107 and subthreshold swing of 0.66 V dec–1.

Text
Ebert+et+al_2018_Nanotechnology_10.1088_1361-6528_aad4c5 - Accepted Manuscript
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More information

Accepted/In Press date: 20 July 2018
e-pub ahead of print date: 2 August 2018
Published date: 12 October 2018

Identifiers

Local EPrints ID: 422532
URI: https://eprints.soton.ac.uk/id/eprint/422532
ISSN: 0957-4484
PURE UUID: 25cf1c4d-9f66-48df-adec-b444a76e0bde
ORCID for Kian Kiang: ORCID iD orcid.org/0000-0002-7326-909X
ORCID for Maurits De Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 25 Jul 2018 16:30
Last modified: 06 Aug 2019 04:01

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