Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories which all show resistive-switching characteristics with ultrahigh ON/OFF ratios in the range of 1E6 to 1E10. Ohmic conduction in the low resistance state is attributed to the formation of Cu conductive filament inside the a-SiOxCy:H switching layer. Rupture of the conductive filament leads to current conduction dominated by Schottky emission through a-SiOxCy:H Schottky contacts. Comparison of the switching characteristics suggests composition of the a-SiOxCy:H has influences on VFORM and VSET, and current conduction mechanisms. These results demonstrate the capability to achieve functional W/a-SiOxCy:H/Cu using entirely BEOL native materials for future embedded resistive memories.
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Kapur, Omesh
008af9d2-92eb-4749-a3be-210010f63449
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
King, Sean W.
fcb63aea-126f-4663-b64b-10553905e089
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Kapur, Omesh
008af9d2-92eb-4749-a3be-210010f63449
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
King, Sean W.
fcb63aea-126f-4663-b64b-10553905e089
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Fan, Junqing, Kapur, Omesh, Huang, Ruomeng, King, Sean W., De Groot, Cornelis and Jiang, Liudi
(2018)
Back-end-of-line a-SiOxCy:H dielectrics for resistive memory.
AIP Advances, 8 (9), [095215].
(doi:10.1063/1.5046564).
Abstract
Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories which all show resistive-switching characteristics with ultrahigh ON/OFF ratios in the range of 1E6 to 1E10. Ohmic conduction in the low resistance state is attributed to the formation of Cu conductive filament inside the a-SiOxCy:H switching layer. Rupture of the conductive filament leads to current conduction dominated by Schottky emission through a-SiOxCy:H Schottky contacts. Comparison of the switching characteristics suggests composition of the a-SiOxCy:H has influences on VFORM and VSET, and current conduction mechanisms. These results demonstrate the capability to achieve functional W/a-SiOxCy:H/Cu using entirely BEOL native materials for future embedded resistive memories.
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Accepted/In Press date: 10 September 2018
e-pub ahead of print date: 18 September 2018
Additional Information:
DOI for data is https://doi.org/10.5258/SOTON/D0641
Identifiers
Local EPrints ID: 423187
URI: http://eprints.soton.ac.uk/id/eprint/423187
ISSN: 2158-3226
PURE UUID: 7539bf5e-6ac0-473a-bc79-5303bf6f92a6
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Date deposited: 19 Sep 2018 16:30
Last modified: 17 Dec 2019 01:51
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Contributors
Author:
Junqing Fan
Author:
Omesh Kapur
Author:
Ruomeng Huang
Author:
Sean W. King
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