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Back-end-of-line a-SiOxCy:H dielectrics for resistive memory

Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories which all show resistive-switching characteristics with ultrahigh ON/OFF ratios in the range of 1E6 to 1E10. Ohmic conduction in the low resistance state is attributed to the formation of Cu conductive filament inside the a-SiOxCy:H switching layer. Rupture of the conductive filament leads to current conduction dominated by Schottky emission through a-SiOxCy:H Schottky contacts. Comparison of the switching characteristics suggests composition of the a-SiOxCy:H has influences on VFORM and VSET, and current conduction mechanisms. These results demonstrate the capability to achieve functional W/a-SiOxCy:H/Cu using entirely BEOL native materials for future embedded resistive memories.
2158-3226
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Kapur, Omesh
008af9d2-92eb-4749-a3be-210010f63449
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
King, Sean W.
fcb63aea-126f-4663-b64b-10553905e089
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Fan, Junqing
0ca2fd5e-6520-47f8-9bfc-289c313a04cb
Kapur, Omesh
008af9d2-92eb-4749-a3be-210010f63449
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
King, Sean W.
fcb63aea-126f-4663-b64b-10553905e089
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1

Fan, Junqing, Kapur, Omesh, Huang, Ruomeng, King, Sean W., De Groot, Cornelis and Jiang, Liudi (2018) Back-end-of-line a-SiOxCy:H dielectrics for resistive memory. AIP Advances, 8 (9). (doi:10.1063/1.5046564).

Record type: Article

Abstract

Resistive switching of W/amorphous (a)-SiOxCy:H/Cu resistive memories incorporating solely native back-end-of-line (BEOL) materials were studied. A-SiC1.1:H, a-SiO0.9C0.7:H, and a-SiO1.5C0.2:H were exploited as switching layers for resistive memories which all show resistive-switching characteristics with ultrahigh ON/OFF ratios in the range of 1E6 to 1E10. Ohmic conduction in the low resistance state is attributed to the formation of Cu conductive filament inside the a-SiOxCy:H switching layer. Rupture of the conductive filament leads to current conduction dominated by Schottky emission through a-SiOxCy:H Schottky contacts. Comparison of the switching characteristics suggests composition of the a-SiOxCy:H has influences on VFORM and VSET, and current conduction mechanisms. These results demonstrate the capability to achieve functional W/a-SiOxCy:H/Cu using entirely BEOL native materials for future embedded resistive memories.

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Accepted/In Press date: 10 September 2018
e-pub ahead of print date: 18 September 2018
Additional Information: DOI for data is https://doi.org/10.5258/SOTON/D0641

Identifiers

Local EPrints ID: 423187
URI: https://eprints.soton.ac.uk/id/eprint/423187
ISSN: 2158-3226
PURE UUID: 7539bf5e-6ac0-473a-bc79-5303bf6f92a6
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

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Date deposited: 19 Sep 2018 16:30
Last modified: 15 Oct 2019 00:47

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Contributors

Author: Junqing Fan
Author: Omesh Kapur
Author: Ruomeng Huang
Author: Sean W. King
Author: Liudi Jiang ORCID iD

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