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Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate

Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate
Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate
Manipulation of carrier densities at the single electron level is inevitable in modern silicon based transistors to ensure reliable circuit operation with sufficiently low threshold-voltage variations.
However, previous methods required statistical analysis to identify devices which exhibit Random Telegraph Signals (RTSs), caused by trapping and de-trapping of a single electron.
Here, we show that we can deliberately introduce a RTS in a silicon nanowire transistor, with its probability distribution perfectly controlled by a triple gate.
A quantum dot (QD) was electrically defined in a silicon nanowire transistor with the triple gate, and
A RTS was observed when two barrier gates were negatively biased to form potential barriers, while the entire nanowire channel was weakly inverted by the top gate.
We could successfully derive the energy levels in the QD from the quantum mechanical probability distributions and the average lifetimes of RTSs.
This study reveals that we can manipulate individual electron electrically, even at room temperature, and paves the way to use a charged state for quantum technologies in the future.
0957-4484
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Husain, Muhammad
39a98158-3f8d-4977-84fc-79fad405bc60
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Hillier, Joseph
3621050b-74de-4fb7-b1ee-968965966336
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Husain, Muhammad
39a98158-3f8d-4977-84fc-79fad405bc60
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Hillier, Joseph
3621050b-74de-4fb7-b1ee-968965966336
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Liu, Fayong, Ibukuro, Kouta, Husain, Muhammad, Li, Zuo, Hillier, Joseph, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2018) Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate. Nanotechnology, 29 (47). (doi:10.1088/1361-6528/aadfa6).

Record type: Article

Abstract

Manipulation of carrier densities at the single electron level is inevitable in modern silicon based transistors to ensure reliable circuit operation with sufficiently low threshold-voltage variations.
However, previous methods required statistical analysis to identify devices which exhibit Random Telegraph Signals (RTSs), caused by trapping and de-trapping of a single electron.
Here, we show that we can deliberately introduce a RTS in a silicon nanowire transistor, with its probability distribution perfectly controlled by a triple gate.
A quantum dot (QD) was electrically defined in a silicon nanowire transistor with the triple gate, and
A RTS was observed when two barrier gates were negatively biased to form potential barriers, while the entire nanowire channel was weakly inverted by the top gate.
We could successfully derive the energy levels in the QD from the quantum mechanical probability distributions and the average lifetimes of RTSs.
This study reveals that we can manipulate individual electron electrically, even at room temperature, and paves the way to use a charged state for quantum technologies in the future.

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Submitted date: 6 August 2018
Accepted/In Press date: 7 September 2018
e-pub ahead of print date: 7 September 2018
Published date: 25 September 2018

Identifiers

Local EPrints ID: 423543
URI: http://eprints.soton.ac.uk/id/eprint/423543
ISSN: 0957-4484
PURE UUID: 5ec08503-471b-44e6-a48b-6da0fae0b81a
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Kouta Ibukuro: ORCID iD orcid.org/0000-0002-6546-8873
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

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Date deposited: 25 Sep 2018 16:30
Last modified: 17 Dec 2019 01:38

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Contributors

Author: Fayong Liu ORCID iD
Author: Kouta Ibukuro ORCID iD
Author: Muhammad Husain
Author: Zuo Li
Author: Joseph Hillier
Author: Isao Tomita
Author: Yoshishige Tsuchiya
Author: Harvey Rutt
Author: Shinichi Saito ORCID iD

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