56 Gbps Si/GeSi integrated EAM
56 Gbps Si/GeSi integrated EAM
The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 µm x 40 µm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.
Waveguide modulators, Electro-optical devices, Optical interconnects
1-10
Mastronardi, Lorenzo
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Hattasan, Nannicha
4f163cbe-eaaa-4771-82c5-af34c9c97fe9
Rutirawut, Teerapat
e7350fb8-f14f-4d5b-ae8c-bc02b2132219
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Grabska, Katarzyna, Monika
5f82b736-08ad-4ddb-9f6a-01eea5f9975f
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Bazin, Alexandre
8245e0d4-0f89-4eea-8fc8-ee09ed7b7826
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
28 October 2018
Mastronardi, Lorenzo
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Hattasan, Nannicha
4f163cbe-eaaa-4771-82c5-af34c9c97fe9
Rutirawut, Teerapat
e7350fb8-f14f-4d5b-ae8c-bc02b2132219
Domínguez Bucio, Thalía
83b57799-c566-473c-9b53-92e9c50b4287
Grabska, Katarzyna, Monika
5f82b736-08ad-4ddb-9f6a-01eea5f9975f
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Bazin, Alexandre
8245e0d4-0f89-4eea-8fc8-ee09ed7b7826
Mashanovich, Goran
c806e262-af80-4836-b96f-319425060051
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Mastronardi, Lorenzo, Banakar, Mehdi, Khokhar, Ali, Hattasan, Nannicha, Rutirawut, Teerapat, Domínguez Bucio, Thalía, Grabska, Katarzyna, Monika, Littlejohns, Callum, Bazin, Alexandre, Mashanovich, Goran and Gardes, Frederic
(2018)
56 Gbps Si/GeSi integrated EAM.
Proceedings of SPIE, 10823, , [10823D].
(doi:10.1117/12.2502709).
Abstract
The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 µm x 40 µm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.
Text
accepted manuscript
- Accepted Manuscript
More information
Accepted/In Press date: 13 September 2018
e-pub ahead of print date: 25 October 2018
Published date: 28 October 2018
Additional Information:
COS Photonics Asia
Keywords:
Waveguide modulators, Electro-optical devices, Optical interconnects
Identifiers
Local EPrints ID: 423745
URI: http://eprints.soton.ac.uk/id/eprint/423745
ISSN: 0277-786X
PURE UUID: bb591e54-ece9-47b5-b982-b6984cdda7ff
Catalogue record
Date deposited: 28 Sep 2018 16:30
Last modified: 07 Oct 2020 02:21
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Contributors
Author:
Lorenzo Mastronardi
Author:
Ali Khokhar
Author:
Nannicha Hattasan
Author:
Katarzyna, Monika Grabska
Author:
Alexandre Bazin
University divisions
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