Mastronardi, Lorenzo, Banakar, Mehdi, Khokhar, Ali, Hattasan, Nannicha, Rutirawut, Teerapat, Domínguez Bucio, Thalía, Grabska, Katarzyna, Monika, Littlejohns, Callum, Bazin, Alexandre, Mashanovich, Goran and Gardes, Frederic (2018) 56 Gbps Si/GeSi integrated EAM. Proceedings of SPIE, 10823, 1-10, [10823D]. (doi:10.1117/12.2502709).
Abstract
The growing demand for fast, reliable and low power interconnect systems requires the development of efficient and scalable CMOS compatible photonic devices, in particular optical modulators. In this paper, we demonstrate an innovative electro absorption modulator (EAM) developed on an 800 nm SOI platform; the device is integrated in a rib waveguide with dimensions of a 1.5 µm x 40 µm, etched on a selectively grown GeSi cavity. High speed measurements at 1566 nm show an eye diagram with dynamic ER of 5.2 dB at 56 Gbps with a power consumption of 44 fJ/bit.
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- Faculties (pre 2018 reorg) > Faculty of Physical Sciences and Engineering (pre 2018 reorg) > Electronics & Computer Science (pre 2018 reorg) > Photonic Systems Circuits & Sensors (pre 2018 reorg)
Current Faculties > Faculty of Engineering and Physical Sciences > School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Photonic Systems Circuits & Sensors (pre 2018 reorg)
School of Electronics and Computer Science > Electronics & Computer Science (pre 2018 reorg) > Photonic Systems Circuits & Sensors (pre 2018 reorg) - Faculties (pre 2018 reorg) > Faculty of Physical Sciences and Engineering (pre 2018 reorg) > Optoelectronics Research Centre (pre 2018 reorg)
Current Faculties > Faculty of Engineering and Physical Sciences > Zepler Institute for Photonics and Nanoelectronics > Optoelectronics Research Centre (pre 2018 reorg)
Zepler Institute for Photonics and Nanoelectronics > Optoelectronics Research Centre (pre 2018 reorg)
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