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Electrical characteristics of interfacial barriers at Metal – TiO2 contacts

Electrical characteristics of interfacial barriers at Metal – TiO2 contacts
Electrical characteristics of interfacial barriers at Metal – TiO2 contacts
The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety of metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on the role of TiO2 as active material have been the main focus, however, electrode materials are equally important. In this work, we address this need by presenting a systematic quantitative electrical characterization study on the interface characteristics of Metal-TiO2-Metal structures. Our study employs typical contact materials that are used both as top and bottom electrodes in a Metal-TiO2-Metal setting. This allows investigating the characteristics of the interfaces as well as holistically studying an electrode’s influence to the opposite interface, referred to in this work as top/bottom electrodes interrelationship. Our methodology comprises the recording of current-voltage (I-V) characteristics from a variety of solid-state prototypes in the temperature range of 300-350 K and by analysing them through appropriate modelling. Clear field and temperature dependent signature plots were also obtained towards shinning more light on the role of each material as top/bottom electrodes in Metal-TiO2-Metal configurations. Our results highlight that these are not conventional metal-semiconductor contacts and several parameters such as the electrodes position (atop or below the film), the electronegativity, the interface states and even the opposite interface electrode material are involved on the formation of the interfacial barriers. Overall our study provides a useful database for selecting appropriate electrode materials in TiO2 based devices, offering new insights on the role of electrodes on metal-oxide electronics applications.
0022-3727
1-13
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Michalas, Loukas, Khiat, Ali, Stathopoulos, Spyros and Prodromakis, Themis (2018) Electrical characteristics of interfacial barriers at Metal – TiO2 contacts. Journal of Physics D: Applied Physics, 51 (42), 1-13. (doi:10.1088/1361-6463/aadbd2).

Record type: Article

Abstract

The electrical properties of thin TiO2 films have recently been extensively exploited towards enabling a variety of metal-oxide electron devices: unipolar/bipolar semiconductor devices and/or memristors. In such efforts, investigations on the role of TiO2 as active material have been the main focus, however, electrode materials are equally important. In this work, we address this need by presenting a systematic quantitative electrical characterization study on the interface characteristics of Metal-TiO2-Metal structures. Our study employs typical contact materials that are used both as top and bottom electrodes in a Metal-TiO2-Metal setting. This allows investigating the characteristics of the interfaces as well as holistically studying an electrode’s influence to the opposite interface, referred to in this work as top/bottom electrodes interrelationship. Our methodology comprises the recording of current-voltage (I-V) characteristics from a variety of solid-state prototypes in the temperature range of 300-350 K and by analysing them through appropriate modelling. Clear field and temperature dependent signature plots were also obtained towards shinning more light on the role of each material as top/bottom electrodes in Metal-TiO2-Metal configurations. Our results highlight that these are not conventional metal-semiconductor contacts and several parameters such as the electrodes position (atop or below the film), the electronegativity, the interface states and even the opposite interface electrode material are involved on the formation of the interfacial barriers. Overall our study provides a useful database for selecting appropriate electrode materials in TiO2 based devices, offering new insights on the role of electrodes on metal-oxide electronics applications.

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Michalas 2018 J. Phys. D Appl. Phys. 51 425101 - Version of Record
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More information

Accepted/In Press date: 20 August 2018
e-pub ahead of print date: 21 August 2018
Published date: 10 September 2018

Identifiers

Local EPrints ID: 424571
URI: https://eprints.soton.ac.uk/id/eprint/424571
ISSN: 0022-3727
PURE UUID: d215f5b2-aaa6-4c1d-9479-931ac2dd94dc
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 05 Oct 2018 11:38
Last modified: 10 Dec 2019 01:35

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Contributors

Author: Loukas Michalas
Author: Ali Khiat

University divisions

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