Random-telegraph-noise and wave-particle duality found in a silicon nano-wire
Random-telegraph-noise and wave-particle duality found in a silicon nano-wire
The observation of Random-Telegraph-Noise (RTN) in double-gate Silicon Nanowire transistor at room temperature is reported. The device showing no RTN when the channel is fully inverted exhibits RTN upon application of negative voltage on the double gates forming a Quantum Dot (QD) in the nanowire. The particle nature of an electron explicitly appears in the electron transport characteristic where its wave nature is the dominant mechanism to account for.
Ibukuro, Kouta
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Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad
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Li, Zuo
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Tsuchiya, Yoshishige
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Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
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12 September 2018
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad
39a98158-3f8d-4977-84fc-79fad405bc60
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Ibukuro, Kouta, Liu, Fayong, Husain, Muhammad, Li, Zuo, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi
(2018)
Random-telegraph-noise and wave-particle duality found in a silicon nano-wire.
International conference on solid state devices and materials 2018, , Tokyo, Japan.
09 - 13 Sep 2018.
2 pp
.
Record type:
Conference or Workshop Item
(Paper)
Abstract
The observation of Random-Telegraph-Noise (RTN) in double-gate Silicon Nanowire transistor at room temperature is reported. The device showing no RTN when the channel is fully inverted exhibits RTN upon application of negative voltage on the double gates forming a Quantum Dot (QD) in the nanowire. The particle nature of an electron explicitly appears in the electron transport characteristic where its wave nature is the dominant mechanism to account for.
Text
SSDM2018 Kouta Ibukuro final for preprint
- Accepted Manuscript
Text
SSDM2018_Kouta_Ibukuro_final_for_preprint
- Accepted Manuscript
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Published date: 12 September 2018
Venue - Dates:
International conference on solid state devices and materials 2018, , Tokyo, Japan, 2018-09-09 - 2018-09-13
Identifiers
Local EPrints ID: 424890
URI: http://eprints.soton.ac.uk/id/eprint/424890
PURE UUID: 278fef01-ad42-4688-a6fe-1ab130295175
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Date deposited: 27 Nov 2018 17:30
Last modified: 16 Mar 2024 04:11
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Contributors
Author:
Kouta Ibukuro
Author:
Fayong Liu
Author:
Muhammad Husain
Author:
Zuo Li
Author:
Yoshishige Tsuchiya
Author:
Harvey Rutt
Author:
Shinichi Saito
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