Defects in epitaxial II-VI semiconductors
Defects in epitaxial II-VI semiconductors
II-VI compounds find application in infra-red detectors, solid-state lasers and other optical devices. They are frequently produced as epitaxial layers on substrates of other materials. Crystalline defects in the layers affect their properties. Many defects in II-VI epitaxial layers are produced unintentionally during growth by •relaxation'. Understanding of relaxation is necessary for control of material properties. In this work, new techniques have been developed for the successful direct observation of defects in cadmium telluride and cadmium mercury telluride epitaxial layers by transmission electron microscopy in both plan-view and cross-section, and this has allowed the relaxation mechanisms to be elucidated. The study has included liquid-phase epitaxial and metal-organic vapour-phase epitaxial material. Surface topography of layers has been observed in detail with atomic force microscopy, to understand the effect of chemistry on growth, and attempts have been made to correlate surface features with crystalline defects. A previously unobserved ordered second phase has been observed in CMT layers on GaAs, and characterised.
University of Southampton
Wasenczuk, Adam
c37fe0d5-546e-4cea-b539-adcd3e21b89e
1 September 1998
Wasenczuk, Adam
c37fe0d5-546e-4cea-b539-adcd3e21b89e
Wasenczuk, Adam
(1998)
Defects in epitaxial II-VI semiconductors.
University of Southampton, Doctoral Thesis, 115pp.
Record type:
Thesis
(Doctoral)
Abstract
II-VI compounds find application in infra-red detectors, solid-state lasers and other optical devices. They are frequently produced as epitaxial layers on substrates of other materials. Crystalline defects in the layers affect their properties. Many defects in II-VI epitaxial layers are produced unintentionally during growth by •relaxation'. Understanding of relaxation is necessary for control of material properties. In this work, new techniques have been developed for the successful direct observation of defects in cadmium telluride and cadmium mercury telluride epitaxial layers by transmission electron microscopy in both plan-view and cross-section, and this has allowed the relaxation mechanisms to be elucidated. The study has included liquid-phase epitaxial and metal-organic vapour-phase epitaxial material. Surface topography of layers has been observed in detail with atomic force microscopy, to understand the effect of chemistry on growth, and attempts have been made to correlate surface features with crystalline defects. A previously unobserved ordered second phase has been observed in CMT layers on GaAs, and characterised.
Text
Phd thesis DEFECTS IN EPITAXIAL II-VI SEMICONDUCTORS 00074113
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Published date: 1 September 1998
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Local EPrints ID: 426603
URI: http://eprints.soton.ac.uk/id/eprint/426603
PURE UUID: eff557f9-d691-4873-894c-bab4e9bbd297
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Date deposited: 03 Dec 2018 17:30
Last modified: 15 Mar 2024 23:12
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Author:
Adam Wasenczuk
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