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Single electron manipulation in silicon nanowires for quantum technologies

Single electron manipulation in silicon nanowires for quantum technologies
Single electron manipulation in silicon nanowires for quantum technologies
A redenition of the Ampere based on the quantum metrology triangle is required to improve the accuracy of the unit. The Si single electron pump is considered a promising candidate for the single electron source in the quantum metrology triangle due to its compatibility with the state-of-art CMOS manufacturing platform. However, the fabrication processes have not been fully established, and the performance impact factors and reliability of Si single electron pumps have not been fully addressed.

In this project, I successfully fabricated Si electron pumps with atomically at surfaces, using the advanced facilities in Southampton Nanofabrication Centre. I observed current plateaus with the width of 18 meV and uncertainty of 0.828% when the single electron pump is operated at 125 MHz in the National Physical Laboratory, showing the possibilities for the applications of current calibration. The reliability issues were investigated by measuring Si quantum dot devices and the single electron pumps fabricated. The impact of charge traps in quantum devices were addressed by investigating the random telegraph noise in the devices. I demonstrated that the charge traps can impact the device reliability by resonant tunnelling, which will help scientists to understand further about the reliability impact factors of silicon quantum devices.
University of Southampton
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2

Li, Zuo (2018) Single electron manipulation in silicon nanowires for quantum technologies. University of Southampton, Doctoral Thesis, 154pp.

Record type: Thesis (Doctoral)

Abstract

A redenition of the Ampere based on the quantum metrology triangle is required to improve the accuracy of the unit. The Si single electron pump is considered a promising candidate for the single electron source in the quantum metrology triangle due to its compatibility with the state-of-art CMOS manufacturing platform. However, the fabrication processes have not been fully established, and the performance impact factors and reliability of Si single electron pumps have not been fully addressed.

In this project, I successfully fabricated Si electron pumps with atomically at surfaces, using the advanced facilities in Southampton Nanofabrication Centre. I observed current plateaus with the width of 18 meV and uncertainty of 0.828% when the single electron pump is operated at 125 MHz in the National Physical Laboratory, showing the possibilities for the applications of current calibration. The reliability issues were investigated by measuring Si quantum dot devices and the single electron pumps fabricated. The impact of charge traps in quantum devices were addressed by investigating the random telegraph noise in the devices. I demonstrated that the charge traps can impact the device reliability by resonant tunnelling, which will help scientists to understand further about the reliability impact factors of silicon quantum devices.

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Accepted/In Press date: 2018
Published date: June 2018

Identifiers

Local EPrints ID: 426612
URI: http://eprints.soton.ac.uk/id/eprint/426612
PURE UUID: e5751833-2696-4a78-9c4e-73dd62badd0a
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 03 Dec 2018 17:31
Last modified: 18 Feb 2021 17:19

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