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Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. We observe that the electron trapping affecting the insulating layer is mitigated after a rapid thermal annealing (RTA) treatment. The RTA improved also the permittivity (up to 6ε0), although the negative fixed charge remains in the order of 1012 cm−2. However, the temperature dependent electrical investigation of the metal-oxide-semiconductor (MOS) capacitors demonstrates that the room temperature Fowler-Nordheim electron barrier height of 2.37 eV lies between the values expected for SiO2/4H-SiC and Al2O3/4H-SiC systems.
290-294
Fiorenza, Patrick
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Vivona, Marilena
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Di Franco, Salvatore
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Smecca, Emanuele
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Sanzaro, Salvatore
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Alberti, Alessandra
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Saggio, Mario
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Roccaforte, Fabrizio
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Fiorenza, Patrick
27a1dabd-d1e1-4609-a0f8-06d439ea7485
Vivona, Marilena
d5097400-64be-4d8a-99d2-8ecc6e3dbbed
Di Franco, Salvatore
4e970a78-9565-437d-98f3-e5e4de46d07e
Smecca, Emanuele
8bad97bd-f08a-4f9d-b9cb-25e4bdc20d98
Sanzaro, Salvatore
4edbc5bb-ca8b-4052-a544-5717f756f0d4
Alberti, Alessandra
1ef77295-e1ac-419d-a818-8ea58d693135
Saggio, Mario
cbfcab15-171d-41d5-83a7-44635b570b33
Roccaforte, Fabrizio
c7fd165e-238d-48d0-9d14-d7019f7a6dbf

Fiorenza, Patrick, Vivona, Marilena, Di Franco, Salvatore, Smecca, Emanuele, Sanzaro, Salvatore, Alberti, Alessandra, Saggio, Mario and Roccaforte, Fabrizio (2019) Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering. Materials Science in Semiconductor Processing, 93, 290-294. (doi:10.1016/j.mssp.2019.01.017).

Record type: Article

Abstract

In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. We observe that the electron trapping affecting the insulating layer is mitigated after a rapid thermal annealing (RTA) treatment. The RTA improved also the permittivity (up to 6ε0), although the negative fixed charge remains in the order of 1012 cm−2. However, the temperature dependent electrical investigation of the metal-oxide-semiconductor (MOS) capacitors demonstrates that the room temperature Fowler-Nordheim electron barrier height of 2.37 eV lies between the values expected for SiO2/4H-SiC and Al2O3/4H-SiC systems.

Text
Mat. Sci. Semicon. Proc. 2019 Vivona - Accepted Manuscript
Restricted to Repository staff only until 19 January 2021.
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More information

Accepted/In Press date: 14 January 2019
e-pub ahead of print date: 19 January 2019
Published date: April 2019

Identifiers

Local EPrints ID: 427796
URI: https://eprints.soton.ac.uk/id/eprint/427796
PURE UUID: fabd4366-9767-4730-883e-ba615ba7ebb3
ORCID for Marilena Vivona: ORCID iD orcid.org/0000-0002-0765-8556

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Date deposited: 29 Jan 2019 17:30
Last modified: 20 Jul 2019 00:32

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Contributors

Author: Patrick Fiorenza
Author: Marilena Vivona ORCID iD
Author: Salvatore Di Franco
Author: Emanuele Smecca
Author: Salvatore Sanzaro
Author: Alessandra Alberti
Author: Mario Saggio
Author: Fabrizio Roccaforte

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