Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. We observe that the electron trapping affecting the insulating layer is mitigated after a rapid thermal annealing (RTA) treatment. The RTA improved also the permittivity (up to 6ε0), although the negative fixed charge remains in the order of 1012 cm−2. However, the temperature dependent electrical investigation of the metal-oxide-semiconductor (MOS) capacitors demonstrates that the room temperature Fowler-Nordheim electron barrier height of 2.37 eV lies between the values expected for SiO2/4H-SiC and Al2O3/4H-SiC systems.
290-294
Fiorenza, Patrick
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Vivona, Marilena
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Di Franco, Salvatore
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Smecca, Emanuele
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Sanzaro, Salvatore
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Alberti, Alessandra
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Saggio, Mario
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Roccaforte, Fabrizio
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April 2019
Fiorenza, Patrick
27a1dabd-d1e1-4609-a0f8-06d439ea7485
Vivona, Marilena
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Di Franco, Salvatore
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Smecca, Emanuele
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Sanzaro, Salvatore
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Alberti, Alessandra
1ef77295-e1ac-419d-a818-8ea58d693135
Saggio, Mario
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Roccaforte, Fabrizio
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Fiorenza, Patrick, Vivona, Marilena, Di Franco, Salvatore, Smecca, Emanuele, Sanzaro, Salvatore, Alberti, Alessandra, Saggio, Mario and Roccaforte, Fabrizio
(2019)
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering.
Materials Science in Semiconductor Processing, 93, , [93].
(doi:10.1016/j.mssp.2019.01.017).
Abstract
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. We observe that the electron trapping affecting the insulating layer is mitigated after a rapid thermal annealing (RTA) treatment. The RTA improved also the permittivity (up to 6ε0), although the negative fixed charge remains in the order of 1012 cm−2. However, the temperature dependent electrical investigation of the metal-oxide-semiconductor (MOS) capacitors demonstrates that the room temperature Fowler-Nordheim electron barrier height of 2.37 eV lies between the values expected for SiO2/4H-SiC and Al2O3/4H-SiC systems.
Text
Mat. Sci. Semicon. Proc. 2019 Vivona
- Accepted Manuscript
More information
Accepted/In Press date: 14 January 2019
e-pub ahead of print date: 19 January 2019
Published date: April 2019
Identifiers
Local EPrints ID: 427796
URI: http://eprints.soton.ac.uk/id/eprint/427796
PURE UUID: fabd4366-9767-4730-883e-ba615ba7ebb3
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Date deposited: 29 Jan 2019 17:30
Last modified: 16 Mar 2024 07:32
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Contributors
Author:
Patrick Fiorenza
Author:
Marilena Vivona
Author:
Salvatore Di Franco
Author:
Emanuele Smecca
Author:
Salvatore Sanzaro
Author:
Alessandra Alberti
Author:
Mario Saggio
Author:
Fabrizio Roccaforte
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