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Hot wire chemical vapor deposition for silicon photonics: an emerging industrial application opportunity

Hot wire chemical vapor deposition for silicon photonics: an emerging industrial application opportunity
Hot wire chemical vapor deposition for silicon photonics: an emerging industrial application opportunity
In this work different silicon photonic devices, including straight waveguides, multi-mode interference devices and Mach-Zehnder interferometers, were fabricated and characterized on hot-wire chemical vapor deposition (HWCVD) silicon nitride (SiN) layers deposited at temperatures below 350 °C. These layers presented a hydrogen concentration of 13.1%, which is lower than that achieved with plasma enhanced chemical vapor deposition at these deposition temperatures. The lowest reported optical propagation losses of 6.1 dB/cm and 5.7 dB/cm,1550 nm and 1310 respectively, for straight SiN waveguides prepared by HWCVD was measured. We demonstrated that silicon nitride SiN, prepared using HWCVD, is a viable material for silicon photonics fabrication.
0040-6090
26-30
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Oo, Swe
6495f6da-8f17-4484-98fb-6151b4efbd9a
Petra, R.
578011d0-6b70-412e-abb7-d04acce3ac4a
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Oo, Swe
6495f6da-8f17-4484-98fb-6151b4efbd9a
Petra, R.
578011d0-6b70-412e-abb7-d04acce3ac4a
Khokhar, Ali
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Boden, Stuart
83976b65-e90f-42d1-9a01-fe9cfc571bf8
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Tarazona, Antulio, Domínguez Bucio, Thalia, Oo, Swe, Petra, R., Khokhar, Ali, Boden, Stuart, Gardes, Frederic, Reed, Graham and Chong, Harold (2019) Hot wire chemical vapor deposition for silicon photonics: an emerging industrial application opportunity. Thin Solid Films, 676, 26-30. (doi:10.1016/j.tsf.2019.02.048).

Record type: Article

Abstract

In this work different silicon photonic devices, including straight waveguides, multi-mode interference devices and Mach-Zehnder interferometers, were fabricated and characterized on hot-wire chemical vapor deposition (HWCVD) silicon nitride (SiN) layers deposited at temperatures below 350 °C. These layers presented a hydrogen concentration of 13.1%, which is lower than that achieved with plasma enhanced chemical vapor deposition at these deposition temperatures. The lowest reported optical propagation losses of 6.1 dB/cm and 5.7 dB/cm,1550 nm and 1310 respectively, for straight SiN waveguides prepared by HWCVD was measured. We demonstrated that silicon nitride SiN, prepared using HWCVD, is a viable material for silicon photonics fabrication.

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Submitted date: 4 February 2019
Accepted/In Press date: 27 February 2019
e-pub ahead of print date: 28 February 2019
Published date: 30 April 2019

Identifiers

Local EPrints ID: 428961
URI: https://eprints.soton.ac.uk/id/eprint/428961
ISSN: 0040-6090
PURE UUID: a490a05d-4a9c-4c28-8fc9-5efb162337ad
ORCID for Thalia Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403
ORCID for Stuart Boden: ORCID iD orcid.org/0000-0002-4232-1828
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 15 Mar 2019 17:30
Last modified: 20 Jul 2019 00:57

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