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An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks

An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks
An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks
Resistive random access memories (RRAMs) can be programmed to discrete resistive levels on demand via voltage pulses with appropriate amplitude and widths. This tuneability enables the design of various emerging concepts, to name a few: neuromorphic applications and reconfigurable circuits. Despite the wide interest in RRAM technologies there is still room for improvement and the key lies with understanding better the underpinning mechanism responsible for resistive switching. This work presents a methodology that aids such efforts, by revealing the nature of the resistive switching through assessing the transport properties in the non-switching operation regimes, before and after switching occurs. Variation in the transport properties obtained by analysing the current-voltage characteristics at distinct temperatures provides experimental evidence for understanding the nature of the responsible mechanism. This study is performed on prototyped device stacks that possess common Au bottom electrodes, identical TiO2 active layers while employing three different top electrodes, Au, Ni and Pt. Our results support in all cases an interface controlled transport due to Schottky emission and suggest that the acquired gradual switching originates by the bias induced modification of the interfacial barrier. Throughout this study, the top electrode material was found to play a role in determining the electroforming requirements and thus indirectly the devices’ memristive characteristics whilst both the top and bottom metal/oxide interfaces are found to be modified as result of this process.
2045-2322
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Michalas, Loukas
25d00d54-5900-485e-bd52-d3505fe881a7
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Khiat, Ali
bf549ddd-5356-4a7d-9c12-eb6c0d904050
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Michalas, Loukas, Stathopoulos, Spyros, Khiat, Ali and Prodromakis, Themis (2019) An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks. Scientific Reports, 9. (doi:10.1038/s41598-019-44607-3).

Record type: Article

Abstract

Resistive random access memories (RRAMs) can be programmed to discrete resistive levels on demand via voltage pulses with appropriate amplitude and widths. This tuneability enables the design of various emerging concepts, to name a few: neuromorphic applications and reconfigurable circuits. Despite the wide interest in RRAM technologies there is still room for improvement and the key lies with understanding better the underpinning mechanism responsible for resistive switching. This work presents a methodology that aids such efforts, by revealing the nature of the resistive switching through assessing the transport properties in the non-switching operation regimes, before and after switching occurs. Variation in the transport properties obtained by analysing the current-voltage characteristics at distinct temperatures provides experimental evidence for understanding the nature of the responsible mechanism. This study is performed on prototyped device stacks that possess common Au bottom electrodes, identical TiO2 active layers while employing three different top electrodes, Au, Ni and Pt. Our results support in all cases an interface controlled transport due to Schottky emission and suggest that the acquired gradual switching originates by the bias induced modification of the interfacial barrier. Throughout this study, the top electrode material was found to play a role in determining the electroforming requirements and thus indirectly the devices’ memristive characteristics whilst both the top and bottom metal/oxide interfaces are found to be modified as result of this process.

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Accepted Manuscript-An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stacks - Accepted Manuscript
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More information

Accepted/In Press date: 17 May 2019
e-pub ahead of print date: 3 June 2019
Published date: 3 June 2019

Identifiers

Local EPrints ID: 431559
URI: https://eprints.soton.ac.uk/id/eprint/431559
ISSN: 2045-2322
PURE UUID: b3aa2219-5d0c-45be-a49a-7424501959b9
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

Catalogue record

Date deposited: 07 Jun 2019 16:30
Last modified: 03 Dec 2019 05:01

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Contributors

Author: Loukas Michalas
Author: Ali Khiat

University divisions

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