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SiN-SOI multilayer platform for prospective applications at 2 μm

SiN-SOI multilayer platform for prospective applications at 2 μm
SiN-SOI multilayer platform for prospective applications at 2 μm

Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.

2 μm waveband, photonic integrated circuits, silicon nitride, Silicon photonics, waveguides
1943-0655
1-10
Sia, Jia Xu Brian
996b6cec-fd29-4301-9eae-b8b21dbe1405
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Wang, Wanjun
79108a43-c2a9-4a18-9aeb-8a9b45941dd0
Guo, Xin
c1da16ff-f2d9-4500-92c7-aafb401efab8
Zhou, Jin
614f5ebf-cf64-4299-b6d3-aee0e91eba8b
Zhang, Zecen
bfd08efc-a02b-4052-a9f7-134e20b902f7
Li, Xiang
17c6973e-1eb2-4051-b084-04fecbb1623b
Qiao, Zhong Liang
c70103ef-3b61-456d-95ff-b760d74bea4f
Liu, Chong Yang
46565e0b-5d4d-407e-8d3a-ee2d344fe21a
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Sia, Jia Xu Brian
996b6cec-fd29-4301-9eae-b8b21dbe1405
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Wang, Wanjun
79108a43-c2a9-4a18-9aeb-8a9b45941dd0
Guo, Xin
c1da16ff-f2d9-4500-92c7-aafb401efab8
Zhou, Jin
614f5ebf-cf64-4299-b6d3-aee0e91eba8b
Zhang, Zecen
bfd08efc-a02b-4052-a9f7-134e20b902f7
Li, Xiang
17c6973e-1eb2-4051-b084-04fecbb1623b
Qiao, Zhong Liang
c70103ef-3b61-456d-95ff-b760d74bea4f
Liu, Chong Yang
46565e0b-5d4d-407e-8d3a-ee2d344fe21a
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad

Sia, Jia Xu Brian, Reed, Graham T., Wang, Hong, Wang, Wanjun, Guo, Xin, Zhou, Jin, Zhang, Zecen, Li, Xiang, Qiao, Zhong Liang, Liu, Chong Yang and Littlejohns, Callum (2019) SiN-SOI multilayer platform for prospective applications at 2 μm. IEEE Photonics Journal, 11 (6), 1-10, [8894868]. (doi:10.1109/JPHOT.2019.2952603).

Record type: Article

Abstract

Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935 - 1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.

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08894868 - Version of Record
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More information

Accepted/In Press date: 6 November 2019
e-pub ahead of print date: 11 November 2019
Published date: 1 December 2019
Keywords: 2 μm waveband, photonic integrated circuits, silicon nitride, Silicon photonics, waveguides

Identifiers

Local EPrints ID: 437188
URI: http://eprints.soton.ac.uk/id/eprint/437188
ISSN: 1943-0655
PURE UUID: 0ae266db-cc20-463d-9fc7-d38e185a5be7

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Date deposited: 21 Jan 2020 17:34
Last modified: 07 Oct 2020 00:39

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Contributors

Author: Jia Xu Brian Sia
Author: Graham T. Reed
Author: Hong Wang
Author: Wanjun Wang
Author: Xin Guo
Author: Jin Zhou
Author: Zecen Zhang
Author: Xiang Li
Author: Zhong Liang Qiao
Author: Chong Yang Liu

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