Characterization of Al-doped Mn-Co-Ni-O NTC thermistor films prepared by the magnetron co-sputtering approach
Characterization of Al-doped Mn-Co-Ni-O NTC thermistor films prepared by the magnetron co-sputtering approach
A serial of Al-doped Mn–Co–Ni–O thermistor thin films were prepared by a magnetron co-sputtering system using an Mn1.4Co1.3Ni0.3 alloy target and an Al target. The composition and electrical properties of the thin films could be well controlled by adjusting the sputtering power of the Al target. It was found that the Mn3+, Mn4+, and Co2+ cations at the octahedral sites of the compact and flat films were gradually replaced by the Al3+ cation during doping. The amount of Al dopant in the compound film was easily adjusted by controlling the sputtering power applied to the doping Al target. The experimental results demonstrate that the NTC characters were found in all films. The optimum point (15 W) of Al sputtering power was determined, at which both the maximum material constant B value (4112 K) and the lowest carrier concentration (2.46 × 1014 cm−3) was characterized in the film. The significant enhancement of the B value for NTC thin films can potentially widen the temperature measurement range for sensing applications.
Cation distribution, Electrical properties, Magnetron co-sputtering, Thermistor thin films
Xuan, Tingting
baba524e-2d2b-4b3b-a75e-656f1b253148
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Wang, Junhua
85ee0d9c-2e23-456e-b13f-5ae07d433162
Kong, Wenwen
4bc20a0c-996b-417f-8e48-2da859566190
Chang, Aimin
a2cfeeb8-1f29-40c5-9e02-013a15320f73
5 August 2020
Xuan, Tingting
baba524e-2d2b-4b3b-a75e-656f1b253148
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Wang, Junhua
85ee0d9c-2e23-456e-b13f-5ae07d433162
Kong, Wenwen
4bc20a0c-996b-417f-8e48-2da859566190
Chang, Aimin
a2cfeeb8-1f29-40c5-9e02-013a15320f73
Xuan, Tingting, Yan, Jize, Wang, Junhua, Kong, Wenwen and Chang, Aimin
(2020)
Characterization of Al-doped Mn-Co-Ni-O NTC thermistor films prepared by the magnetron co-sputtering approach.
Journal of Alloys and Compounds, 831, [154831].
(doi:10.1016/j.jallcom.2020.154831).
Abstract
A serial of Al-doped Mn–Co–Ni–O thermistor thin films were prepared by a magnetron co-sputtering system using an Mn1.4Co1.3Ni0.3 alloy target and an Al target. The composition and electrical properties of the thin films could be well controlled by adjusting the sputtering power of the Al target. It was found that the Mn3+, Mn4+, and Co2+ cations at the octahedral sites of the compact and flat films were gradually replaced by the Al3+ cation during doping. The amount of Al dopant in the compound film was easily adjusted by controlling the sputtering power applied to the doping Al target. The experimental results demonstrate that the NTC characters were found in all films. The optimum point (15 W) of Al sputtering power was determined, at which both the maximum material constant B value (4112 K) and the lowest carrier concentration (2.46 × 1014 cm−3) was characterized in the film. The significant enhancement of the B value for NTC thin films can potentially widen the temperature measurement range for sensing applications.
Text
Characterization of Al-doped Mn-Co-Ni-O NTC thermistor films prepared by the magnetron co-sputtering approach
- Accepted Manuscript
More information
Accepted/In Press date: 17 March 2020
e-pub ahead of print date: 19 March 2020
Published date: 5 August 2020
Additional Information:
Funding Information:
This work was supported by the National Key Research and Development Program of China (Grant No. 2017YFB0406405 ), the National Natural Science Foundation of China (Grant No. 61804178 ) and the Science Foundation of the Xinjiang Uygur Autonomous Region of China (No. 2017D01B51 ).
Publisher Copyright:
© 2020 Elsevier B.V.
Keywords:
Cation distribution, Electrical properties, Magnetron co-sputtering, Thermistor thin films
Identifiers
Local EPrints ID: 439638
URI: http://eprints.soton.ac.uk/id/eprint/439638
ISSN: 0925-8388
PURE UUID: 785cf903-d64e-4e55-b22c-af99c5cc5980
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Date deposited: 28 Apr 2020 16:35
Last modified: 17 Mar 2024 05:30
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Contributors
Author:
Tingting Xuan
Author:
Junhua Wang
Author:
Wenwen Kong
Author:
Aimin Chang
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