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Channel mobility and contact resistance in scaled Zno thin-film

Channel mobility and contact resistance in scaled Zno thin-film
Channel mobility and contact resistance in scaled Zno thin-film
Zno thin-film transistors (TFTs) with scaled channel lengths of 10 μm, 5 μm, 4 μm, and 2 μm are fabricated by a top-down approach using remote plasma atomic layer deposition technique. Current-voltage measurements indicate an 푛-type channel enhancement mode transistor operation, with threshold voltages in the range of 8.4 V to 5.3 V, maximum drain currents of 4.6 μA/μm, 9.7 μA/μm, 19.4 μA/μm, and 24.7 μA/μm, and breakdown voltages of 80 V, 70 V, 62 V, and 59 V with respect to the channel lengths of 10 μm, 5 μm, 4 μm, and 2 μm. Contact resistance, effective electron mobility (including contact resistance) and channel electron mobility (excluding contact resistance) electron mobility extracted using the transmission line method (TLM) demonstrated a dependency on the channel length as a function of gate bias. The channel electron mobility for the 10 μm channel length TFT is 0.782 cm2/Vs (0.83 cm2/Vs) at a gate bias of 10 V (15 V) increasing to 8.9 cm2/Vs (19.04 cm2/Vs) when the channel length is scaled down to 2 μm. Finally, the contact sheet resistance of 4.6×105 Ω/sq extracted from measurements is 3.5× larger than the contact sheet resistance of 1.3×105 Ω/sq obtained from DFT calculation and 1D self-consistent Poisson-Shrödinger simulation showing an increase in the drive current.
0038-1101
Alnazer, Mohamed
9b66c41b-3261-47cf-b102-4ea9ad2294f2
Ghazali, Nor Azlin
33bcdbac-4785-419d-be3b-81297f27c0dc
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Cobley, Richard
23e33509-14f9-4929-b6fc-3aed4c556f63
Li, Lijie
4154c35e-21e0-423f-a3ed-5919a7283eb6
Kalna, Karol
5bda7abf-e173-42ac-bc6a-8652a3898846
Alnazer, Mohamed
9b66c41b-3261-47cf-b102-4ea9ad2294f2
Ghazali, Nor Azlin
33bcdbac-4785-419d-be3b-81297f27c0dc
Chong, Harold
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Cobley, Richard
23e33509-14f9-4929-b6fc-3aed4c556f63
Li, Lijie
4154c35e-21e0-423f-a3ed-5919a7283eb6
Kalna, Karol
5bda7abf-e173-42ac-bc6a-8652a3898846

Alnazer, Mohamed, Ghazali, Nor Azlin, Chong, Harold, Cobley, Richard, Li, Lijie and Kalna, Karol (2020) Channel mobility and contact resistance in scaled Zno thin-film. Solid-State Electronics. (In Press)

Record type: Article

Abstract

Zno thin-film transistors (TFTs) with scaled channel lengths of 10 μm, 5 μm, 4 μm, and 2 μm are fabricated by a top-down approach using remote plasma atomic layer deposition technique. Current-voltage measurements indicate an 푛-type channel enhancement mode transistor operation, with threshold voltages in the range of 8.4 V to 5.3 V, maximum drain currents of 4.6 μA/μm, 9.7 μA/μm, 19.4 μA/μm, and 24.7 μA/μm, and breakdown voltages of 80 V, 70 V, 62 V, and 59 V with respect to the channel lengths of 10 μm, 5 μm, 4 μm, and 2 μm. Contact resistance, effective electron mobility (including contact resistance) and channel electron mobility (excluding contact resistance) electron mobility extracted using the transmission line method (TLM) demonstrated a dependency on the channel length as a function of gate bias. The channel electron mobility for the 10 μm channel length TFT is 0.782 cm2/Vs (0.83 cm2/Vs) at a gate bias of 10 V (15 V) increasing to 8.9 cm2/Vs (19.04 cm2/Vs) when the channel length is scaled down to 2 μm. Finally, the contact sheet resistance of 4.6×105 Ω/sq extracted from measurements is 3.5× larger than the contact sheet resistance of 1.3×105 Ω/sq obtained from DFT calculation and 1D self-consistent Poisson-Shrödinger simulation showing an increase in the drive current.

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SSE_2020_69 - Accepted Manuscript
Restricted to Repository staff only until 11 May 2022.
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Accepted/In Press date: 11 May 2020

Identifiers

Local EPrints ID: 441872
URI: http://eprints.soton.ac.uk/id/eprint/441872
ISSN: 0038-1101
PURE UUID: e83a1056-6787-44c5-8d69-304f10d49400
ORCID for Harold Chong: ORCID iD orcid.org/0000-0002-7110-5761

Catalogue record

Date deposited: 01 Jul 2020 16:30
Last modified: 18 Feb 2021 17:10

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Contributors

Author: Mohamed Alnazer
Author: Nor Azlin Ghazali
Author: Harold Chong ORCID iD
Author: Richard Cobley
Author: Lijie Li
Author: Karol Kalna

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