Study of GeSn mid-infrared photodetectors for high frequency applications
Study of GeSn mid-infrared photodetectors for high frequency applications
In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 µm to show the potential of the GeSn materials in short-wave infrared photonics23. However, there are only a few discussions about high frequency capabilities of GeSn photodetectors. It is needed to understand the potential of GeSn detectors as high frequency devices. This paper discusses comprehensively about the performance of GeSn photodiodes with 6.44 and 9.24% Sn for high frequency applications including high speed measurements and simulations. With high Sn incorporation, the cutoff wavelength is extended up to 2.2 and 2.5 µm wavelengths for 6.44 and 9.24% Sn devices, respectively. The photodiodes' bandwidth is 1.78 GHz, and the simulation shows excellent agreement with measurement results. The reported GeSn photodetectors together with recently reported GeSn lasers and other GeSn microwave photonic components will be a potential candidate for integrated microwave photonics.
Tran, Huong
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Littlejohns, Callum G.
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Thomson, David J.
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Pham, Thach
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Ghetmiri, Amir
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Mosleh, Aboozar
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Margetis, Joe
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Tolle, John
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Mashanovich, Goran Z.
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Du, Wei
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Li, Baohua
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Mortazavi, Mansour
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Yu, Shui-Qing
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Tran, Huong
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Littlejohns, Callum G.
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Thomson, David J.
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Pham, Thach
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Ghetmiri, Amir
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Mosleh, Aboozar
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Margetis, Joe
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Tolle, John
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Mashanovich, Goran Z.
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Du, Wei
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Li, Baohua
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Mortazavi, Mansour
2019ef91-3ce5-4f29-b72c-93c3fd56f31a
Yu, Shui-Qing
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Tran, Huong, Littlejohns, Callum G., Thomson, David J., Pham, Thach, Ghetmiri, Amir, Mosleh, Aboozar, Margetis, Joe, Tolle, John, Mashanovich, Goran Z., Du, Wei, Li, Baohua, Mortazavi, Mansour and Yu, Shui-Qing
(2019)
Study of GeSn mid-infrared photodetectors for high frequency applications.
Frontiers in Materials, 6.
(doi:10.3389/fmats.2019.00278).
(In Press)
Abstract
In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 µm to show the potential of the GeSn materials in short-wave infrared photonics23. However, there are only a few discussions about high frequency capabilities of GeSn photodetectors. It is needed to understand the potential of GeSn detectors as high frequency devices. This paper discusses comprehensively about the performance of GeSn photodiodes with 6.44 and 9.24% Sn for high frequency applications including high speed measurements and simulations. With high Sn incorporation, the cutoff wavelength is extended up to 2.2 and 2.5 µm wavelengths for 6.44 and 9.24% Sn devices, respectively. The photodiodes' bandwidth is 1.78 GHz, and the simulation shows excellent agreement with measurement results. The reported GeSn photodetectors together with recently reported GeSn lasers and other GeSn microwave photonic components will be a potential candidate for integrated microwave photonics.
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Study of GeSn mid-infrared photodetectors
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Accepted/In Press date: 21 October 2019
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Local EPrints ID: 441923
URI: http://eprints.soton.ac.uk/id/eprint/441923
PURE UUID: 51b5822c-45ac-4bd4-bb8b-fcb2bdc4f841
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Date deposited: 02 Jul 2020 16:31
Last modified: 29 Oct 2024 02:45
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Contributors
Author:
Huong Tran
Author:
Callum G. Littlejohns
Author:
David J. Thomson
Author:
Thach Pham
Author:
Amir Ghetmiri
Author:
Aboozar Mosleh
Author:
Joe Margetis
Author:
John Tolle
Author:
Goran Z. Mashanovich
Author:
Wei Du
Author:
Baohua Li
Author:
Mansour Mortazavi
Author:
Shui-Qing Yu
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