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Study of GeSn mid-infrared photodetectors for high frequency applications

Study of GeSn mid-infrared photodetectors for high frequency applications
Study of GeSn mid-infrared photodetectors for high frequency applications
In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 µm to show the potential of the GeSn materials in short-wave infrared photonics23. However, there are only a few discussions about high frequency capabilities of GeSn photodetectors. It is needed to understand the potential of GeSn detectors as high frequency devices. This paper discusses comprehensively about the performance of GeSn photodiodes with 6.44 and 9.24% Sn for high frequency applications including high speed measurements and simulations. With high Sn incorporation, the cutoff wavelength is extended up to 2.2 and 2.5 µm wavelengths for 6.44 and 9.24% Sn devices, respectively. The photodiodes' bandwidth is 1.78 GHz, and the simulation shows excellent agreement with measurement results. The reported GeSn photodetectors together with recently reported GeSn lasers and other GeSn microwave photonic components will be a potential candidate for integrated microwave photonics.
Tran, Huong
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Littlejohns, Callum G.
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Thomson, David J.
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Pham, Thach
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Ghetmiri, Amir
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Mosleh, Aboozar
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Margetis, Joe
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Tolle, John
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Mashanovich, Goran Z.
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Du, Wei
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Li, Baohua
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Mortazavi, Mansour
2019ef91-3ce5-4f29-b72c-93c3fd56f31a
Yu, Shui-Qing
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Tran, Huong
2b7c0b45-bdd8-4b47-9a2d-91e8ecb98a9b
Littlejohns, Callum G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Pham, Thach
1595cb81-f858-465d-aece-1363dc23bc06
Ghetmiri, Amir
dfe1f093-addb-42b4-b391-6f90581c619f
Mosleh, Aboozar
1885c8c7-04e9-41be-a57b-e72c3b4fd5cc
Margetis, Joe
a87806c2-811a-4674-803c-173eea4a1baa
Tolle, John
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Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Du, Wei
61dbbd67-b93c-47d8-9522-5ed86cdb6f65
Li, Baohua
a50b5a13-3c8e-4c9d-81c1-fac6d561f977
Mortazavi, Mansour
2019ef91-3ce5-4f29-b72c-93c3fd56f31a
Yu, Shui-Qing
157637ea-a556-4efa-a037-a7fdcf91ba34

Tran, Huong, Littlejohns, Callum G., Thomson, David J., Pham, Thach, Ghetmiri, Amir, Mosleh, Aboozar, Margetis, Joe, Tolle, John, Mashanovich, Goran Z., Du, Wei, Li, Baohua, Mortazavi, Mansour and Yu, Shui-Qing (2019) Study of GeSn mid-infrared photodetectors for high frequency applications. Frontiers in Materials, 6. (doi:10.3389/fmats.2019.00278). (In Press)

Record type: Article

Abstract

In 2016, Thach et al. reported figures of merit of the GeSn photodiodes with large mesa sizes of 500 and 250 µm to show the potential of the GeSn materials in short-wave infrared photonics23. However, there are only a few discussions about high frequency capabilities of GeSn photodetectors. It is needed to understand the potential of GeSn detectors as high frequency devices. This paper discusses comprehensively about the performance of GeSn photodiodes with 6.44 and 9.24% Sn for high frequency applications including high speed measurements and simulations. With high Sn incorporation, the cutoff wavelength is extended up to 2.2 and 2.5 µm wavelengths for 6.44 and 9.24% Sn devices, respectively. The photodiodes' bandwidth is 1.78 GHz, and the simulation shows excellent agreement with measurement results. The reported GeSn photodetectors together with recently reported GeSn lasers and other GeSn microwave photonic components will be a potential candidate for integrated microwave photonics.

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Accepted/In Press date: 21 October 2019

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Local EPrints ID: 441923
URI: http://eprints.soton.ac.uk/id/eprint/441923
PURE UUID: 51b5822c-45ac-4bd4-bb8b-fcb2bdc4f841

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Date deposited: 02 Jul 2020 16:31
Last modified: 06 Oct 2020 17:55

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Contributors

Author: Huong Tran
Author: Thach Pham
Author: Amir Ghetmiri
Author: Aboozar Mosleh
Author: Joe Margetis
Author: John Tolle
Author: Wei Du
Author: Baohua Li
Author: Mansour Mortazavi
Author: Shui-Qing Yu

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