p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells
p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells
Hot wire chemical vapour deposition (HWCVD) is explored as a way of growing boron-doped silicon for photovoltaic devices. Deposition temperatures are measured using a custom-built monitoring system for two different filament configurations within the HWCVD tool. A refined fabrication process is presented, using an altered filament arrangement, that currently provides a maximum deposition temperature of 535 °C, for growing boron-doped silicon films via HWCVD, with the inclusion of a short post-deposition anneal at 800 °C for 2 min. Transmission electron microscopy reveals improvements in interfacial quality, as well as larger grains, present after post-annealing treatments. In addition, re-crystallisation of as-deposited amorphous Si films under a short anneal is confirmed using Raman spectroscopy. The enhancements in morphology translate to a boost in current rectification based on dark current-voltage measurements. This is further supported by secondary-ion mass spectrometry analysis, presenting p+ properties with uniform doping in the 1021 cm−3 region.
Crystallisation, Emitter, Hot wire chemical vapour deposition, Selective area electron diffraction, Silicon solar cells, Transmission electron microscopy
Khorani, Edris
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Scheul, Tudor E.
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Tarazona, Antulio
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Nutter, John
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Rahman, Tasmiat
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Boden, Stuart
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1 July 2020
Khorani, Edris
bbdfbcc3-5dd0-4a73-80ed-7a0bff1d5388
Scheul, Tudor E.
9c4d130a-a09f-4847-bf81-28ec61297a62
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Nutter, John
bfeb97ea-8696-4dcf-8a34-c980332d2d65
Rahman, Tasmiat
e7432efa-2683-484d-9ec6-2f9c568d30cd
Boden, Stuart
702bdc07-a448-4512-aacf-297c292e740b
Khorani, Edris, Scheul, Tudor E., Tarazona, Antulio, Nutter, John, Rahman, Tasmiat and Boden, Stuart
(2020)
p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells.
Thin Solid Films, 705, [137978].
(doi:10.1016/j.tsf.2020.137978).
Abstract
Hot wire chemical vapour deposition (HWCVD) is explored as a way of growing boron-doped silicon for photovoltaic devices. Deposition temperatures are measured using a custom-built monitoring system for two different filament configurations within the HWCVD tool. A refined fabrication process is presented, using an altered filament arrangement, that currently provides a maximum deposition temperature of 535 °C, for growing boron-doped silicon films via HWCVD, with the inclusion of a short post-deposition anneal at 800 °C for 2 min. Transmission electron microscopy reveals improvements in interfacial quality, as well as larger grains, present after post-annealing treatments. In addition, re-crystallisation of as-deposited amorphous Si films under a short anneal is confirmed using Raman spectroscopy. The enhancements in morphology translate to a boost in current rectification based on dark current-voltage measurements. This is further supported by secondary-ion mass spectrometry analysis, presenting p+ properties with uniform doping in the 1021 cm−3 region.
Text
p(+) polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells
- Accepted Manuscript
More information
Accepted/In Press date: 23 March 2020
e-pub ahead of print date: 14 April 2020
Published date: 1 July 2020
Keywords:
Crystallisation, Emitter, Hot wire chemical vapour deposition, Selective area electron diffraction, Silicon solar cells, Transmission electron microscopy
Identifiers
Local EPrints ID: 442307
URI: http://eprints.soton.ac.uk/id/eprint/442307
ISSN: 0040-6090
PURE UUID: b499ef8d-c281-42e9-a533-035e18da241d
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Date deposited: 13 Jul 2020 16:30
Last modified: 16 Jul 2024 01:46
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Contributors
Author:
Edris Khorani
Author:
Tudor E. Scheul
Author:
Antulio Tarazona
Author:
John Nutter
Author:
Tasmiat Rahman
Author:
Stuart Boden
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