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p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells

p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells
p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells
Hot wire chemical vapour deposition (HWCVD) is explored as a way of growing boron-doped silicon for photovoltaic devices. Deposition temperatures are measured using a custom-built monitoring system for two different filament configurations within the HWCVD tool. A refined fabrication process is presented, using an altered filament arrangement, that currently provides a maximum deposition temperature of 535 °C, for growing boron-doped silicon films via HWCVD, with the inclusion of a short post-deposition anneal at 800 °C for 2 min. Transmission electron microscopy reveals improvements in interfacial quality, as well as larger grains, present after post-annealing treatments. In addition, re-crystallisation of as-deposited amorphous Si films under a short anneal is confirmed using Raman spectroscopy. The enhancements in morphology translate to a boost in current rectification based on dark current-voltage measurements. This is further supported by secondary-ion mass spectrometry analysis, presenting p+ properties with uniform doping in the 1021 cm−3 region.
Crystallisation, Emitter, Hot wire chemical vapour deposition, Selective area electron diffraction, Silicon solar cells, Transmission electron microscopy
0040-6090
Khoran, Edris
2fee632b-5957-4850-bfb3-b8bfb918cf48
Scheula,, Tudor E.
980fb0c2-2fea-4e11-afd3-57e138ae764c
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Nutter, John
bfeb97ea-8696-4dcf-8a34-c980332d2d65
Rahmana, Tasmiat
672791b2-7590-4c5a-9ebc-dc906274f83e
Boden, Stuart
702bdc07-a448-4512-aacf-297c292e740b
Khoran, Edris
2fee632b-5957-4850-bfb3-b8bfb918cf48
Scheula,, Tudor E.
980fb0c2-2fea-4e11-afd3-57e138ae764c
Tarazona, Antulio
c6ae87c5-c746-4f89-9ff0-9e7b6874e94f
Nutter, John
bfeb97ea-8696-4dcf-8a34-c980332d2d65
Rahmana, Tasmiat
672791b2-7590-4c5a-9ebc-dc906274f83e
Boden, Stuart
702bdc07-a448-4512-aacf-297c292e740b

Khoran, Edris, Scheula,, Tudor E., Tarazona, Antulio, Nutter, John, Rahmana, Tasmiat and Boden, Stuart (2020) p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells. Thin Solid Films, 705, [137978]. (doi:10.1016/j.tsf.2020.137978).

Record type: Article

Abstract

Hot wire chemical vapour deposition (HWCVD) is explored as a way of growing boron-doped silicon for photovoltaic devices. Deposition temperatures are measured using a custom-built monitoring system for two different filament configurations within the HWCVD tool. A refined fabrication process is presented, using an altered filament arrangement, that currently provides a maximum deposition temperature of 535 °C, for growing boron-doped silicon films via HWCVD, with the inclusion of a short post-deposition anneal at 800 °C for 2 min. Transmission electron microscopy reveals improvements in interfacial quality, as well as larger grains, present after post-annealing treatments. In addition, re-crystallisation of as-deposited amorphous Si films under a short anneal is confirmed using Raman spectroscopy. The enhancements in morphology translate to a boost in current rectification based on dark current-voltage measurements. This is further supported by secondary-ion mass spectrometry analysis, presenting p+ properties with uniform doping in the 1021 cm−3 region.

Text
p(+) polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells - Accepted Manuscript
Restricted to Repository staff only until 14 October 2021.
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More information

Accepted/In Press date: 23 March 2020
e-pub ahead of print date: 14 April 2020
Published date: 1 July 2020
Keywords: Crystallisation, Emitter, Hot wire chemical vapour deposition, Selective area electron diffraction, Silicon solar cells, Transmission electron microscopy

Identifiers

Local EPrints ID: 442307
URI: http://eprints.soton.ac.uk/id/eprint/442307
ISSN: 0040-6090
PURE UUID: b499ef8d-c281-42e9-a533-035e18da241d

Catalogue record

Date deposited: 13 Jul 2020 16:30
Last modified: 18 Nov 2020 17:31

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