Zhang, Weiwei, Debnath, Kapil, Chen, Bigeng, Li, Ke, Liu, Shenghao, Ebert, Martin, Reynolds, Jamie Dean, Khokhar, Ali Z, Littlejohns, Callum, Byers, James J, Husain, Muhammad K, Gardes, Frederic, Saito, Shinichi and Thomson, David (2021) Dataset for: High bandwidth capacitance efficient Silicon MOS modulator. University of Southampton doi:10.5258/SOTON/D1257 [Dataset]
Abstract
This dataset supports the publication: Zhang, Weiwei et al.(2020). High bandwidth capacitance efficient Silicon MOS modulator. Journal of Lightwave Technology. This paper analysed and optimised horizontal Silicon Insulator Silicon CAPacitor (H-SISCAP) phase shifter structures with insulator thickness tox up to 40nm. The phase shifter has an effective capacitance (Ceff) in range 0.5 fF/um and a phase change efficiency 1.8 V ·cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 µm long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s data rate with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.
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