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Dataset for: High bandwidth capacitance efficient Silicon MOS modulator

Dataset for: High bandwidth capacitance efficient Silicon MOS modulator
Dataset for: High bandwidth capacitance efficient Silicon MOS modulator
This dataset supports the publication: Zhang, Weiwei et al.(2020). High bandwidth capacitance efficient Silicon MOS modulator. Journal of Lightwave Technology. This paper analysed and optimised horizontal Silicon Insulator Silicon CAPacitor (H-SISCAP) phase shifter structures with insulator thickness tox up to 40nm. The phase shifter has an effective capacitance (Ceff) in range 0.5 fF/um and a phase change efficiency 1.8 V ·cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 µm long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s data rate with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.
Electrooptic modulators, MOS, silicon photonics
University of Southampton
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Chen, Bigeng
e533448b-095e-4a9f-924c-301f4aa3007b
Li, Ke
dd788ca7-0a39-4364-b4b8-65f0bb93340f
Liu, Shenghao
5b0ec29e-0ddb-4e08-950b-ba6adb1d01ed
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Reynolds, Jamie Dean
96faa744-02ee-458c-8e48-953ea9e54afe
Khokhar, Ali Z
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Byers, James J
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Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Chen, Bigeng
e533448b-095e-4a9f-924c-301f4aa3007b
Li, Ke
dd788ca7-0a39-4364-b4b8-65f0bb93340f
Liu, Shenghao
5b0ec29e-0ddb-4e08-950b-ba6adb1d01ed
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Reynolds, Jamie Dean
96faa744-02ee-458c-8e48-953ea9e54afe
Khokhar, Ali Z
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Byers, James J
f64a1b0d-87c1-4d2f-9539-84857a6d862e
Husain, Muhammad K
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda

Zhang, Weiwei, Debnath, Kapil, Chen, Bigeng, Li, Ke, Liu, Shenghao, Ebert, Martin, Reynolds, Jamie Dean, Khokhar, Ali Z, Littlejohns, Callum, Byers, James J, Husain, Muhammad K, Gardes, Frederic, Saito, Shinichi and Thomson, David (2021) Dataset for: High bandwidth capacitance efficient Silicon MOS modulator. University of Southampton doi:10.5258/SOTON/D1257 [Dataset]

Record type: Dataset

Abstract

This dataset supports the publication: Zhang, Weiwei et al.(2020). High bandwidth capacitance efficient Silicon MOS modulator. Journal of Lightwave Technology. This paper analysed and optimised horizontal Silicon Insulator Silicon CAPacitor (H-SISCAP) phase shifter structures with insulator thickness tox up to 40nm. The phase shifter has an effective capacitance (Ceff) in range 0.5 fF/um and a phase change efficiency 1.8 V ·cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 µm long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s data rate with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.

Archive
MOS_High_TM.zip - Collection
Restricted to System admin until 31 October 2021.
Text
Read_me.txt - Collection
Restricted to System admin until 31 October 2021.

More information

Published date: 2021
Keywords: Electrooptic modulators, MOS, silicon photonics

Identifiers

Local EPrints ID: 444108
URI: http://eprints.soton.ac.uk/id/eprint/444108
PURE UUID: 8568c90d-795e-4272-91cd-8a70812b3256
ORCID for Bigeng Chen: ORCID iD orcid.org/0000-0003-4925-2308
ORCID for Jamie Dean Reynolds: ORCID iD orcid.org/0000-0002-0072-0134
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 25 Sep 2020 16:33
Last modified: 26 Sep 2020 01:45

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