Manipulation of the random telegraph signals for quantum random number generation

Abstract

The random telegraph signals (RTSs) has become a serious reliability issue during the scaling of the CMOS technology. From the fundamental physics point of view, the RTS is generated by the defects at the Si/SiO2 interface or in the gate oxide layer, they can not be eliminated completely. The study on RTSs topic has led a paradigm shift from eliminating the RTSs to utilizing the RTSs. The RTSs phenomenon provides two contrasting states by the quantum effect. It also has shown that the capture and emission time are related to the bias conditions. Principally, the RTSs can be a promising candidate for the new QRNG source. However, the RTSs are usually generated by randomly distributed traps, it prevents the people to have a certain RTSs source. In this case, there is a high demand to develop a certain and stable RTSs source. In this PhD project, we successfully fabricated the RTSs source with the artificial quantum dot in the multi-gate silicon nanowire transistors. The RTSs generated from the artificial quantum dot could be manipulated by the bias condition of the multi-gate. The probability of the two states in the typical RTSs could be balanced equally by the voltage control. In addition, the RTSs phenomenon in conventional MOSFETs was investigated at different temperatures. The quantum confinement in our silicon nanowires was characterized.

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Identifiers

ORCID for Fayong Liu: orcid.org/0000-0003-4443-9720

ORCID for Shinichi Saito: orcid.org/0000-0003-1539-1182

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